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FQD1N50TM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 1.1A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FQD1N50TM |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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