FZ400 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	FZ400R65KF2 Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 400A I(C), 6300V V(BR)CES, N-Channel	FZ400R65KF2	3D model not available Symbol and footprint not available 0	0 Build or Request
	FZ400R12KE4 Infineon	1	IGBT Modules IGBT 1200V 400A	FZ400R12KE4	3D model available Symbol and footprint not available 1	1 Download Model
	FZ400R06KF3 Eupec Gmbh & Co Kg	1	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel	FZ400R06KF3	3D model not available Symbol and footprint not available 0	0 Build or Request
	FZ400R06KF2 Eupec Gmbh & Co Kg	1	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel	FZ400R06KF2	3D model not available Symbol and footprint not available 0	0 Build or Request

	FZ400R33KL2C_B5 Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 750A I(C), 3300V V(BR)CES, N-Channel	FZ400R33KL2C_B5	3D model not available Symbol and footprint not available 0	0 Build or Request
	FZ400R65KF1 Eupec Gmbh & Co Kg	1	Insulated Gate Bipolar Transistor, 800A I(C), 6300V V(BR)CES, N-Channel	FZ400R65KF1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FZ400R17KE3HOSA1 Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 780A I(C), 1700V V(BR)CES, N-Channel	FZ400R17KE3HOSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FZ400R33KL2CB5NOSA1 Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 750A I(C), 3300V V(BR)CES, N-Channel	FZ400R33KL2CB5NOSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FZ400R06KL2 Eupec Gmbh & Co Kg	1	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel	FZ400R06KL2	3D model not available Symbol and footprint not available 0	0 Build or Request
	FZ400R65KF1NOSA1 Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 800A I(C), 6300V V(BR)CES, N-Channel	FZ400R65KF1NOSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FZ400S65K1 Eupec Gmbh & Co Kg	1	Insulated Gate Bipolar Transistor	FZ400S65K1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FZ400R12KE3HOSA1 Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel	FZ400R12KE3HOSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FZ400R12KP4 Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel	FZ400R12KP4	3D model not available Symbol and footprint not available 0	0 Build or Request
	FZ400R65KF2NOSA1 Infineon Technologies AG	1	Insulated Gate Bipolar Transistor, 400A I(C), 6300V V(BR)CES, N-Channel	FZ400R65KF2NOSA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	FZ400R17KE3 Eupec Gmbh & Co Kg	1	Insulated Gate Bipolar Transistor, 620A I(C), 1700V V(BR)CES, N-Channel	FZ400R17KE3	3D model not available Symbol and footprint not available 0	0 Build or Request

	FZ400R12KE3 Eupec Gmbh & Co Kg	1	Insulated Gate Bipolar Transistor, 650A I(C), 1200V V(BR)CES, N-Channel	FZ400R12KE3	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFZ40-010 International Rectifier	1	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFZ40-010	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFZ40-013PBF International Rectifier	1	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFZ40-013PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFZ40-012PBF International Rectifier	1	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFZ40-012PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	EVD25P1FZ400 Amphenol Positronic	1	D Subminiature Connector, 25 Contact(s), Male, 0.109 inch Pitch, Crimp Terminal, Hole .12	EVD25P1FZ400	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFZ40-010 Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFZ40-010	3D model not available Symbol and footprint not available 0	0 Build or Request
	EVD15P2FZ400 Amphenol Positronic	1	D Subminiature Connector, 15 Contact(s), Male, Solder Terminal	EVD15P2FZ400	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFZ40-002 Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFZ40-002	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFZ40-001PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFZ40-001PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFZ40-001 Infineon Technologies AG	1	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFZ40-001	3D model not available Symbol and footprint not available 0	0 Build or Request
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