G05C9 Model Download Search Results
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G05C9K760FE12
Vishay Dale
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1 | RESISTOR, WIRE WOUND, 5 W, 1 %, 20 ppm, 9760 ohm, THROUGH HOLE MOUNT, AXIAL LEADED, ROHS COMPLIANT | G05C9K760FE12 |
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G05C97R60CE12
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 5W, 97.6ohm, 0.25% +/-Tol, -20,20ppm/Cel, | G05C97R60CE12 |
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G05C97R60FS70
Vishay Dale
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1 | RESISTOR, WIRE WOUND, 5 W, 1 %, 20 ppm, 97.6 ohm, THROUGH HOLE MOUNT, AXIAL LEADED | G05C97R60FS70 |
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G05C93R10FE70
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 5W, 93.1ohm, 21.5754V, 1% +/-Tol, 20ppm/Cel, Through Hole Mount, AXIAL LEADED | G05C93R10FE70 |
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G05C98R80CE70
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 5W, 98.8ohm, 0.25% +/-Tol, -20,20ppm/Cel, | G05C98R80CE70 |
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G05C909R0BE70
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 5W, 909ohm, 0.1% +/-Tol, -20,20ppm/Cel, | G05C909R0BE70 |
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G05C90R00FE12
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 5W, 90ohm, 1% +/-Tol, 20ppm/Cel, Through Hole Mount, AXIAL LEADED, ROHS COMPLIANT | G05C90R00FE12 |
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G05C9R530CS70
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 5W, 9.53ohm, 0.25% +/-Tol, -50,50ppm/Cel, | G05C9R530CS70 |
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G05C988R0DB12
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 5W, 988ohm, 0.5% +/-Tol, -20,20ppm/Cel, | G05C988R0DB12 |
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G05C90R00FB12
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 5W, 90ohm, 1% +/-Tol, 20ppm/Cel, Through Hole Mount, AXIAL LEADED | G05C90R00FB12 |
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TBZG05C9V1
Galaxy Microelectronics
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1 | Zener Diode, 9.1V V(Z), 6.08%, 3W, Silicon, Unidirectional | TBZG05C9V1 |
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BZG05C9V1
SUNMATE electronic Co., LTD
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1 | Surface mount silicon Zener diode in SMA (DO-214AC) package with 3.0W power dissipation, 3.9V to 100V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode BZG05C3V9 in SMA (DO-214AC) package with 3.0W power dissipation, 3.9V to 100V voltage range, low leakage current, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 3.0W power dissipation, 3.9V to 100V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 3.0W power dissipation, 3.9V to 100V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 3.0W power dissipation, 3.9V to 100V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode in SMA package with 3.0W power dissipation, 3.9 to 100V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 3.0W power dissipation, 3.9V to 100V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode in SMA package with 3.0W power dissipation, 3.9 to 100V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C.Surface mount silicon Zener diode in SMA (DO-214AC) package with 3.0W power dissipation, 3.9V to 100V voltage range, low leakage current, high reliability, and operating junction temperature from -55 to +150°C. | BZG05C9V1 |
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BZG05C9V1
Galaxy Microelectronics
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1 | Zener Diode, 9.1V V(Z), 6.08%, 3W, Silicon, Unidirectional | BZG05C9V1 |
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BZG05C91-HM3-18
Vishay Intertechnologies
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1 | Zener Diode, 91V V(Z), 6.08%, 1.25W, Silicon, Unidirectional, DO-214AC | BZG05C91-HM3-18 |
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BZG05C9V1-HM3-18
Vishay Intertechnologies
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1 | Zener Diode, 9.1V V(Z), 6.08%, 1.25W, Silicon, Unidirectional, DO-214AC | BZG05C9V1-HM3-18 |
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BZG05C9V1-M3-08
Vishay Intertechnologies
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1 | Zener Diode, 9.1V V(Z), 6.08%, 1.25W, Silicon, Unidirectional, DO-214AC | BZG05C9V1-M3-08 |
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BZG05C91-HM3-08
Vishay Intertechnologies
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1 | Zener Diode, 91V V(Z), 6.08%, 1.25W, Silicon, Unidirectional, DO-214AC | BZG05C91-HM3-08 |
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BZG05C9V1TR3
Vishay Semiconductors
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1 | Zener Diode, 9.1V V(Z), 6.08%, 1.25W, Silicon, Unidirectional, DO-214 | BZG05C9V1TR3 |
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BZG05C91
Galaxy Microelectronics
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1 | Zener Diode, 91V V(Z), 6.08%, 3W, Silicon, Unidirectional | BZG05C91 |
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BZG05C9V1-HM3-08
Vishay Intertechnologies
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1 | Zener Diode, 9.1V V(Z), 6.08%, 1.25W, Silicon, Unidirectional, DO-214AC | BZG05C9V1-HM3-08 |
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BZG05C91
Telefunken Microelectronics Gmbh
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1 | Zener Diode, 91V V(Z), 6%, 1.25W | BZG05C91 |
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BZG05C9V1-E3-TR3
Vishay Intertechnologies
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1 | Zener Diode, 9.1V V(Z), 6.08%, 1.25W, Silicon, Unidirectional, DO-214AC | BZG05C9V1-E3-TR3 |
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BZG05C9V1-HE3-TR3
Vishay Intertechnologies
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1 | Zener Diode, 9.1V V(Z), 6.08%, 1.25W, Silicon, Unidirectional, DO-214AC | BZG05C9V1-HE3-TR3 |
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BZG05C91-TR
Telefunken Microelectronics Gmbh
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1 | Zener Diode, 91V V(Z), 5.5%, 1.25W, | BZG05C91-TR |
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BZG05C9V1
EIC Semiconductor Inc
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1 | Zener Diode, | BZG05C9V1 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/do214_2.jpg"])
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