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IRHM54260PBF
International Rectifier
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1 | Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | IRHM54260PBF |
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IRHM54260UPBF
International Rectifier
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1 | Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRHM54260UPBF |
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IRHM54260PBF
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | IRHM54260PBF |
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IRHM54260D
International Rectifier
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1 | Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRHM54260D |
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IRHM54260U
International Rectifier
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1 | Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRHM54260U |
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