HSBA3 Model Download Search Results
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HSBA3086
Huashuo Semiconductor
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1 | N-Ch 30V Fast Switching MOSFET with 0.7 mΩ RDS(ON), 230 A continuous drain current, 89 W power dissipation, and 65 nC gate charge, suitable for power management and DC/DC converters. | HSBA3086 |
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HSBA3052
Huashuo Semiconductor
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1 | N-Ch 30V Fast Switching MOSFET with 52A continuous drain current, 5 mΩ typical RDS(ON), low gate charge, and 24W power dissipation in a PRPAK 5x6 package. | HSBA3052 |
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