IMBG6 Model Download Search Results
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IMBG65R007M2H
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 238A I(D), 650V, 0.0085ohm, 1-Element, N-Channel, Silicon Carbide, Trench Mosfet FET, TO-263 | IMBG65R007M2H |
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IMBG65R163M1HXTMA1
Infineon
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1 | 650V Cool SiC ªM1 SiC Trench Power Device, RDS(on),typ-163mΩ , RDS(on),max-217mΩ, QG,typ-10nc, IDM-31A | IMBG65R163M1HXTMA1 |
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IMBG65R072M1HXTMA1
TAIYO YUDEN
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1 | N-Channel 650 V 33A (Tc) 140W (Tc) Surface Mount PG-TO263-7-12 | IMBG65R072M1HXTMA1 |
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![Part Image](["//media.rs-online.com/t_large/Y2489328-01.jpg",null,null])
![Part Image](["https://componentsearchengine.com/2D/0/19761892.png",null,null])
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