IPB02 Footprint, Symbol and 3D Model search results

Showing 25 of 51 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IPB021N06N3GATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB021N06N3GATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB020N08N5 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB020N08N5	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB022N04LG Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB022N04LG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB027N10N5E8187ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB027N10N5E8187ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB029N06N3GE8187ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB029N06N3GE8187ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB025N08N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB025N08N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB025N08N3GATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB025N08N3GATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB025N10N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IPB025N10N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB024N08N5ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB024N08N5ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB020N10N5LF Infineon Technologies AG	1	Power Field-Effect Transistor, 176A I(D), 100V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB020N10N5LF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB023N04NGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB023N04NGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB020N04NG Infineon Technologies AG	1	Power Field-Effect Transistor, 140A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263	IPB020N04NG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB023N04NG Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB023N04NG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB020NE7N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB020NE7N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB025N08N3GXT Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB025N08N3GXT	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB026N10NF2S Infineon Technologies AG	1	Power Field-Effect Transistor, 162A I(D), 100V, 0.00265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB026N10NF2S	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB020NE7N3GATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB020NE7N3GATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB021N04N Infineon Technologies AG	1	Power Field-Effect Transistor, 160A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IPB021N04N	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB029N06N3GATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB029N06N3GATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB022N04LGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB022N04LGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB023N06N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 140A I(D), 60V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263	IPB023N06N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB020N04NGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 140A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263	IPB020N04NGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB027N10N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB027N10N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB029N06N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB029N06N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB021N06N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB021N06N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
1 2 3

Can't find what you're looking for? Request this part

IPB02 Model Download Search Results

Popular Power Field-Effect Transistors