IPB12 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IPB120N04S401ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N04S401ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120N04S4L02ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N04S4L02ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120N06S402XT Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N06S402XT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120N08S404ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N08S404ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB123N10N3G Infineon Technologies AG	1	Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB123N10N3G	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120N03S4L-03 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N03S4L-03	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120N06S4-H1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N06S4-H1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120N08S4-04 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N08S4-04	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB123N10N3GXT Infineon Technologies AG	1	Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB123N10N3GXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120N04S4-01 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N04S4-01	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120N06S403ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N06S403ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120N06S4H1ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N06S4H1ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120N10S4-05 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 100V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N10S4-05	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB12CNE8NG Infineon Technologies AG	1	Power Field-Effect Transistor, 67A I(D), 85V, 0.0129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB12CNE8NG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120N04S4-02 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N04S4-02	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB120N06S4H1XT Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N06S4H1XT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB12CN10NG Infineon Technologies AG	1	Power Field-Effect Transistor, 67A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB12CN10NG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120P04P4-04 Infineon Technologies AG	1	Power Field-Effect Transistor, 120A I(D), 40V, 0.0035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120P04P4-04	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB12CN10NGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 67A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB12CN10NGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB120N06NG Infineon Technologies AG	1	Power Field-Effect Transistor, 75A I(D), 60V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB120N06NG	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB12CNE8NGATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 67A I(D), 85V, 0.0129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB12CNE8NGATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
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