IPB60 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IPB60R250CP Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R250CP	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R199CPXT Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R199CPXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R170CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R170CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R600CPATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R600CPATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB60R950C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R950C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R125C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R125C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R330P6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB	IPB60R330P6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R190C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R190C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R180C7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R180C7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R080P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 37A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R080P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R099CPXT Infineon Technologies AG	1	Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R099CPXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R280P6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R280P6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R160C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R160C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R280C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R280C6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R105CFD7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 21A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB	IPB60R105CFD7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB60R145CFD7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 600V, 0.145ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB	IPB60R145CFD7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R190C6XT Infineon Technologies AG	1	Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R190C6XT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R125CPXT Infineon Technologies AG	1	Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R125CPXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R099C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R099C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R360CFD7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 7A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB	IPB60R360CFD7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R180P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 18A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R180P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R120P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R120P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R330P6 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB	IPB60R330P6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R180C7 Infineon Technologies AG	1	Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R180C7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R230P6 Infineon Technologies AG	1	Power Field-Effect Transistor, 16.8A I(D), 600V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R230P6	3D model not available Symbol and footprint not available 0	0 Build or Request
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