IPB65 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IPB65R660CFDAXT Infineon Technologies AG	1	Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IPB65R660CFDAXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R190C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R190C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R099C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R099C6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R150CFDATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R150CFDATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB65R660CFDATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R660CFDATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R190C7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 13A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB	IPB65R190C7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R110CFDA Infineon Technologies AG	1	Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R110CFDA	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R310CFDA Infineon Technologies AG	1	Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R310CFDA	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R125C7ATMA2 Infineon Technologies AG	1	Power Field-Effect Transistor, 18A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R125C7ATMA2	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R225C7ATMA2 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R225C7ATMA2	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R225C7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 650V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPB65R225C7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R230CFD7A Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R230CFD7A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R190E6 Infineon Technologies AG	1	Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R190E6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R380C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R380C6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R110CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 22A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R110CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB65R150CFDA Infineon Technologies AG	1	Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R150CFDA	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R065C7 Infineon Technologies AG	1	Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R065C7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R095C7 Infineon Technologies AG	1	Power Field-Effect Transistor, 24A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R095C7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R280E6 Infineon Technologies AG	1	Power Field-Effect Transistor, 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R280E6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R190CFD7A Infineon Technologies AG	1	Power Field-Effect Transistor, 14A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R190CFD7A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R110CFDATMA2 Infineon Technologies AG	1	Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R110CFDATMA2	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R099CFD7A Infineon Technologies AG	1	Power Field-Effect Transistor, 24A I(D), 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R099CFD7A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R110CFDATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R110CFDATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R190CFDATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R190CFDATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB65R280C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB65R280C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
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