IPD06 Model Download Search Results
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IPD06P002NATMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 35A I(D), 60V, 0.038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD06P002NATMA1 |
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IPD060N03LG
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 50A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD060N03LG |
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IPD068P03L3GBTMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 70A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD068P03L3GBTMA1 |
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IPD06P003NATMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 22A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD06P003NATMA1 |
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IPD068N10N3GXT
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 90A I(D), 100V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD068N10N3GXT |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_4.jpg"])
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