IPD90 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IPD90N06S4L-05 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N06S4L-05	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N06S407ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 60V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N06S407ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N03S4L03ATMA1 Infineon	1	30 V, N-Ch, 3.3 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2	IPD90N03S4L03ATMA1	3D model available Symbol and footprint not available 1	1 Download Model
	IPD90N06S306ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IPD90N06S306ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPD90N06S4L06ATMA2 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N06S4L06ATMA2	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N04S404ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 40V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N04S404ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N06S4L06XT Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N06S4L06XT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90P04P4-05 Rochester Electronics LLC	1	90A, 40V, 0.0047ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, GREEN, PLASTIC PACKAGE-3	IPD90P04P4-05	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90R1K2C3XT Infineon Technologies AG	1	Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IPD90R1K2C3XT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N06S4L-06 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N06S4L-06	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N06S405ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor	IPD90N06S405ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N04S3H4ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N04S3H4ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N06S407XT Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 60V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N06S407XT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N06S4L05ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N06S4L05ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N10S406ATMA1 Infineon	1	100 V, N-Ch, 6.7 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2	IPD90N10S406ATMA1	3D model available Symbol and footprint not available 1	1 Download Model

	IPD90R1K2C3 Infineon Technologies AG	1	Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IPD90R1K2C3	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N04S3-H4 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N04S3-H4	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90R1K2C3ATMA2 Infineon Technologies AG	1	Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90R1K2C3ATMA2	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N04S4-02 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N04S4-02	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N06S407ATMA2 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 60V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N06S407ATMA2	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90P04P4L-04 Rochester Electronics LLC	1	90A, 40V, 0.0043ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, GREEN, PLASTIC PACKAGE-3	IPD90P04P4L-04	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N06S4-04 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N06S4-04	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90R1K2C3BTMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA	IPD90R1K2C3BTMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90P04P405AUMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 40V, 0.0047ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90P04P405AUMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPD90N03S4L02ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 90A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	IPD90N03S4L02ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
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