IPI60 Model Download Search Results
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IPI60R165CP
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IPI60R165CP |
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IPI60R165CPAKSA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IPI60R165CPAKSA1 |
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IPI60R199CP
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IPI60R199CP |
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IPI60R125CPXKSA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IPI60R125CPXKSA1 |
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IPI60R385CPXKSA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IPI60R385CPXKSA1 |
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IPI60R520CPAKSA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IPI60R520CPAKSA1 |
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IPI60R099CPAXK
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IPI60R099CPAXK |
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EP900IPI-60
Altera Corporation
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1 | Programmable Logic Device, 60ns, PAL-Type, CMOS, PDIP40 | EP900IPI-60 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to262aa_3.jpg"])
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