IPI65 Model Download Search Results
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IPI65R660CFD
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IPI65R660CFD |
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IPI65R099C6XKSA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 650V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IPI65R099C6XKSA1 |
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IPI65R310CFDXKSA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 11.4A I(D), 650V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IPI65R310CFDXKSA1 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to262aa_3.jpg"])
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