IRFS6 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRFS644B Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS644B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS624A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS624A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS610A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS610A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS644 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFS644	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFS620 Samsung Semiconductor	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFS620	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS634B_FP001 Rochester Electronics LLC	1	8.1 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, TO-220F, 3 PIN	IRFS634B_FP001	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS620B_FP001 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRFS620B_FP001	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS625 Samsung Semiconductor	1	Power Field-Effect Transistor, 2.9A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFS625	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS632 Samsung Semiconductor	1	Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFS632	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS631 Samsung Semiconductor	1	Power Field-Effect Transistor, 5.9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFS631	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS620A Samsung Semiconductor	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS620A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS640B_FP001 Rochester Electronics LLC	1	18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, TO-220F, 3 PIN	IRFS640B_FP001	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS634-SM-C Taitron Components Inc	1	Power Field-Effect Transistor	IRFS634-SM-C	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS630B Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFS630B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS640A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS640A	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFS624B_FP001 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRFS624B_FP001	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS640A Rochester Electronics LLC	1	9.8A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN	IRFS640A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS654B Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 21A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS654B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS641 Samsung Semiconductor	1	Power Field-Effect Transistor, 9.8A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFS641	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS644A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS644A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS624A Samsung Semiconductor	1	Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS624A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS630B Rochester Electronics LLC	1	9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F, 3 PIN	IRFS630B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS640 Samsung Semiconductor	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFS640	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS650B Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRFS650B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS624B Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.1A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFS624B	3D model not available Symbol and footprint not available 0	0 Build or Request
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