IRFY2 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRFY230-JQR-B TT Electronics Resistors	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230-JQR-B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240EC International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240EC	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230-QR-BR1 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230-QR-BR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240EPBF International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240EPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFY240 Microsemi Corporation (now Microchip)	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257	IRFY240	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230-JQR-BR1 TT Electronics Resistors	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230-JQR-BR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240M TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240M	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240MECPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240MECPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY220-JQR-B TT Electronics Resistors	1	Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY220-JQR-B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240EDPBF International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240EDPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230 TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRFY230	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240ECPBF International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240ECPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240CSCX International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240CSCX	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240EAPBF International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240EAPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY230CM International Rectifier	1	Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY230CM	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFY220 Thomson-CSF Compsants Specific	1	Power Field-Effect Transistor, 4.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRFY220	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240-QR-EB TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFY240-QR-EB	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240C TT Electronics Power and Hybrid / Semelab Limited	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240C	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240EPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240EPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY210CR1 TT Electronics Resistors	1	Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY210CR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY220-JQR-BR1 TT Electronics Resistors	1	Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY220-JQR-BR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240E International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240E	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240CSCSPBF International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240CSCSPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY240CSCS International Rectifier	1	Power Field-Effect Transistor, 12A I(D), 200V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY240CSCS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFY210 TT Electronics Resistors	1	Power Field-Effect Transistor, 1.8A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB	IRFY210	3D model not available Symbol and footprint not available 0	0 Build or Request
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