IRHM4 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRHM4260U International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4260U	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4250UPBF International Rectifier	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN	IRHM4250UPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4150DPBF International Rectifier	1	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4150DPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4160UPBF International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4160UPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHM4054DPBF International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4054DPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4130U International Rectifier	1	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4130U	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4250D Infineon Technologies AG	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN	IRHM4250D	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4150UPBF International Rectifier	1	Power Field-Effect Transistor, 34A I(D), 100V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4150UPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4Z60PBF International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4Z60PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4250D International Rectifier	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN	IRHM4250D	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4Z60 Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4Z60	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4250 International Rectifier	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3	IRHM4250	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4230UPBF International Rectifier	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4230UPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4230U Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4230U	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4230PBF International Rectifier	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	IRHM4230PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHM4260D International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4260D	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4160D International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4160D	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4260UPBF International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4260UPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4230D Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4230D	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4230DPBF International Rectifier	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4230DPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4260UPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4260UPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4250 Infineon Technologies AG	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3	IRHM4250	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4160DPBF International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4160DPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4130U Infineon Technologies AG	1	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4130U	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHM4230D International Rectifier	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	IRHM4230D	3D model not available Symbol and footprint not available 0	0 Build or Request
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