IRHMJ Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IRHMJ3250 International Rectifier	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRHMJ3250	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHMJ7250 Infineon Technologies AG	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRHMJ7250	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHMJ58160 Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRHMJ58160	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHMJ57160 International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRHMJ57160	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHMJ54160PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRHMJ54160PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHMJ8250 Infineon Technologies AG	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRHMJ8250	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHMJ4250PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRHMJ4250PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHMJ53160PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRHMJ53160PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHMJ57260SEPBF International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRHMJ57260SEPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHMJ8250 International Rectifier	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRHMJ8250	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHMJ57260SE Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRHMJ57260SE	3D model not available Symbol and footprint not available 0	0 Build or Request

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