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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRHYB63134CMPBF International Rectifier	1	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB63134CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB67134CM International Rectifier	1	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67134CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB9A97230CM Infineon Technologies AG	1	Power Field-Effect Transistor, 14A I(D), 200V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB9A97230CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB67130CMPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67130CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHYB593034CM International Rectifier	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHYB593034CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB597Z30CM Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHYB597Z30CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB64230CM International Rectifier	1	Power Field-Effect Transistor, 16A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRHYB64230CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB63130CMSCS Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB63130CMSCS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB597Z30CMPBF International Rectifier	1	Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHYB597Z30CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB67230CM Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67230CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB67130CM Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67130CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB597034CM International Rectifier	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHYB597034CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB63134CMPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB63134CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB63130CMPBF International Rectifier	1	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB63130CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB593034CM Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET	IRHYB593034CM	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRHYB67134CMSCS Infineon Technologies AG	1	Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67134CMSCS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB63130CM Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB63130CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB67230CMPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67230CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB9A93230CM Infineon Technologies AG	1	Power Field-Effect Transistor, 14A I(D), 200V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB9A93230CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB67130CMSCS Infineon Technologies AG	1	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67130CMSCS	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB67230CM International Rectifier	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67230CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB67130CMPBF International Rectifier	1	Power Field-Effect Transistor, 20A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67130CMPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB67230CMSCV Infineon Technologies AG	1	Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB67230CMSCV	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB9A3034CM Infineon Technologies AG	1	Power Field-Effect Transistor, 30A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB9A3034CM	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRHYB9A7234CM Infineon Technologies AG	1	Power Field-Effect Transistor, 17A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA	IRHYB9A7234CM	3D model not available Symbol and footprint not available 0	0 Build or Request
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