IRLI6 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRLI630G-017 International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-017	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-029PBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-029PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-004 International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-004	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-002PBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-002PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLI640G-011PBF International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-011PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-015PBF International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-015PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-011 International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-011	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-019PBF International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-019PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-005 International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-005	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-019 International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-019	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-024 International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-024	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-011 International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-011	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-029 International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-029	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-011PBF International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-011PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-017PBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-017PBF	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLI620A Samsung Semiconductor	1	Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRLI620A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-019 International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-019	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640ATU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA	IRLI640ATU	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-024PBF International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-024PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630G-013 International Rectifier	1	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630G-013	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-005PBF International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-005PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-004 International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-004	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI630GPBF Vishay Siliconix	1	Power Field-Effect Transistor, 6.2A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI630GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI640G-024PBF International Rectifier	1	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI640G-024PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLI620G-031 International Rectifier	1	Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRLI620G-031	3D model not available Symbol and footprint not available 0	0 Build or Request
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