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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	IRLML6402PBF Infineon	1	INFINEON - IRLML6402PBF - MOSFET,P CH,-20V,-3.7A,SOT-23	SOT23 (3-Pin)	IRLML6402PBF	3D model available Symbol and footprint available 3	1 Download Model
	IRLML9303TRPBF Infineon	1	International Rectifier IRLML9303TRPBF P-channel MOSFET Transistor, 2.3 A, 30 V, 3-Pin SOT-23	SOT23 (3-Pin)	IRLML9303TRPBF	3D model available Symbol and footprint available 3	1 Download Model
	IRLML6344TRPBF Infineon	1	IRLML6344TRPBF N-channel MOSFET Transistor, 5 A, 30 V, 3-Pin SOT-23	SOT23 (3-Pin)	IRLML6344TRPBF	3D model not available Symbol and footprint available 2	1 Download Model
	IRLML2246TRPBF Infineon	1	HEXFET Power MOSFET	Other	IRLML2246TRPBF	3D model not available Symbol and footprint available 2	1 Download Model

	IRLML9301TRPBF Infineon	1	International Rectifier IRLML9301TRPBF P-channel MOSFET Transistor, 3.6 A, 30 V, 3-Pin SOT-23	SOT23 (3-Pin)	IRLML9301TRPBF	3D model available Symbol and footprint available 3	1 Download Model
	IRLML0100TRPBF Infineon	1	MOSFET N-Channel 100V 1.6A SOT23 Infineon IRLML0100TRPBF N-channel MOSFET Transistor, 1.6 A, 100 V, 3-Pin SOT-23	SOT23 (3-Pin)	IRLML0100TRPBF	3D model available Symbol and footprint available 3	1 Download Model
	IRLML5203PBF Infineon	1	MOSFET	SOT23 (3-Pin)	IRLML5203PBF	3D model available Symbol and footprint available 3	1 Download Model
	IRLML2803PbF Infineon	1	INFINEON - IRLML2803PBF - MOSFET, N, LOGIC, SOT-23	SOT23 (3-Pin)	IRLML2803PbF	3D model available Symbol and footprint available 3	1 Download Model
	IRLML5203 Shenzhen Heketai Electronics Co Ltd	1	P-Channel Power MOSFET IRLML5203 in SOT-23 package featuring -30V drain-source voltage, -3.0A continuous drain current, 98mΩ on-resistance at -10V VGS, and low profile less than 1.1mm height.		IRLML5203	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2244TRPBF VBsemi Electronics Co Ltd	1	P-Channel 20-V, 5-A MOSFET in SOT-23 package with RDS(on) of 35 mΩ at VGS = -10 V, featuring trench technology and optimized for load switches, PA switches, and DC/DC converters.		IRLML2244TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6402 Shenzhen Heketai Electronics Co Ltd	1	P-Channel MOSFET in SOT-23 package with -20V drain-source voltage, -3.7A continuous drain current at 25°C, ultra-low on-resistance of 65 mΩ at VGS = -4.5V, and fast switching capabilities.		IRLML6402	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2246TRPBF International Rectifier	1	Power Field-Effect Transistor, 2.6A I(D), 20V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML2246TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2803TRPBF-1 Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML2803TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML6302GPBF Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML6302GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2803TRHR International Rectifier	1	Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML2803TRHR	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRLML6302GPBF International Rectifier	1	Small Signal Field-Effect Transistor, 0.78A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML6302GPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML0100TRPBF International Rectifier	1	Power Field-Effect Transistor, 1.6A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML0100TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2502GTRPBF Infineon Technologies AG	1	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML2502GTRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2060TRPBF International Rectifier	1	Power Field-Effect Transistor, 1.2A I(D), 60V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML2060TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2502PBF International Rectifier	1	Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML2502PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5103TRPBF International Rectifier	1	Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET		IRLML5103TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML0030TRPBF International Rectifier	1	Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML0030TRPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5203PBF International Rectifier	1	Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML5203PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML5103PBF Infineon Technologies AG	1	Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		IRLML5103PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRLML2502TRPBF-1 International Rectifier	1	Power Field-Effect Transistor		IRLML2502TRPBF-1	3D model not available Symbol and footprint not available 0	0 Build or Request
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