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ISL73023SEHL/PROTO
Renesas Electronics
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1 | The ISL70023SEH and ISL73023SEH are 100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial aerospace, medical, and nuclear power generation. GaN's exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally | ISL73023SEHL/PROTO |
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ISL73840SEHX/SAMPLE
Intersil Corporation
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1 | Single-Ended Multiplexer | ISL73840SEHX/SAMPLE |
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ISL73590SEHVF
Intersil Corporation
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1 | Analog Circuit | ISL73590SEHVF |
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ISL73128RHVX
Intersil Corporation
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1 | RF POWER TRANSISTOR | ISL73128RHVX |
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ISL73841SEHX/SAMPLE
Intersil Corporation
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1 | Single-Ended Multiplexer | ISL73841SEHX/SAMPLE |
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ISL738841ASEHVF/PROTO
Renesas Electronics
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1 | Radiation Hardened, High Performance Industry Standard Single-Ended Current Mode PWM Controller | ISL738841ASEHVF/PROTO |
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ISL73100SEHX/SAMPLE
Renesas Electronics
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1 | The ISL73100SEH is a radiation hardened 40V current sense amplifier built on the Renesas proprietary PR40 SOI process. This device has a wide power supply range of 2.7V to 40V. The input common-mode voltage is independent of the supply voltage and extends from -0.3V to 40.0V, making them ideal to use in both high-side and low-side applications.The ISL73100SEH is a trans-conductance amplifier that monitors current using an external sense resistor and outputs a current proportional to the sensed voltage. The | ISL73100SEHX/SAMPLE |
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ISL73128RHVF
Renesas Electronics
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1 | The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance | ISL73128RHVF |
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ISL73590SEHF/PROTO
Renesas Electronics
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1 | The ISL71590SEH and ISL73590SEH are temperature-to-current transducers possessing two terminals. They have a high impedance current output that allows them to be insensitive to voltage drops across long lines. When provided a differential voltage between 4V and 33V, the devices act as constant current regulators that generate a current equal to 1μA/Kelvin (K). These devices are specified across the -55 °C to +125 °C temperature range and with ±1.7 °C accuracy without the need for additional circuitry, and a | ISL73590SEHF/PROTO |
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ISL73002SEHVX
Renesas Electronics
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1 | The ISL73002SEH is a radiation hardened and SEE hardened high-efficiency monolithic, synchronous buck regulator with integrated MOSFETs. This single-chip power solution operates over an input voltage range of 3V to 5.5V and provides a tightly regulated output voltage that is externally adjustable from 0.8V to ~85% of the input voltage. Output load current capability is primarily determined by PVIN voltage with up to 22A for a single IC at PVIN ≤ 5.5V for TJ ≤ +125 °C. Two ISL73002SEH devices, configured to | ISL73002SEHVX |
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ISL73419SEHVX
Renesas Electronics
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1 | The ISL70419SEH and ISL73419SEH contain four very high precision amplifiers featuring the perfect combination of low noise vs power consumption. Low offset voltage, low IBIAS current, and low temperature drift make it the ideal choice for applications requiring both high DC accuracy and AC performance. The combination of high precision, low noise, low power, and small footprint provides the user with outstanding value and flexibility relative to similar competitive parts.Applications for these amplifiers in | ISL73419SEHVX |
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ISL73002SEHVF
Renesas Electronics
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1 | The ISL73002SEH is a radiation hardened and SEE hardened high-efficiency monolithic, synchronous buck regulator with integrated MOSFETs. This single-chip power solution operates over an input voltage range of 3V to 5.5V and provides a tightly regulated output voltage that is externally adjustable from 0.8V to ~85% of the input voltage. Output load current capability is primarily determined by PVIN voltage with up to 22A for a single IC at PVIN ≤ 5.5V for TJ ≤ +125 °C. Two ISL73002SEH devices, configured to | ISL73002SEHVF |
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ISL73840SEHVF
Renesas Electronics
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1 | The ISL73840SEH is a radiation tolerant, 16-channel high ESD protected multiplexer fabricated using the Renesas proprietary P6SOI (Silicon On Insulator) process technology. It operates with a dual supply voltage ranging from ±10. 8V to ±16. 5V. It has a 4-bit address plus an enable pin that can be driven with adjustable logic thresholds to conveniently select one of 16 available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any interaction between them | ISL73840SEHVF |
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ISL73244SEHF/PROTO
Renesas Electronics
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1 | The ISL73244SEH features two low-power amplifiers optimized to provide maximum dynamic range. These operational amplifiers (op amps) feature a unique combination of rail-to-rail operation on the input and output and a slew enhanced front end that provides ultra fast slew rates positively proportional to a given step size. These features increase accuracy under both periodic and transient conditions. The ISL73244SEH also offers low power, low offset voltage, and low temperature drift, which makes it ideal fo | ISL73244SEHF/PROTO |
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ISL738841ASEHVF
Renesas Electronics
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1 | The ISL738841ASEH is a high-performance, radiation hardened drop-in replacement for the popular 28C4x and 18C4x PWM controllers suitable for a wide range of power conversion applications including boost, flyback and isolated output configurations. Fast signal propagation and output switching characteristics make these ideal products for existing and new designs. Features include up to 13.2V operation, low operating current, 90µA typical start-up current, adjustable operating frequency to 1MHz, and high peak | ISL738841ASEHVF |
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ISL73444SEHVF
Renesas Electronics
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1 | The ISL73444SEH features four low-power amplifiers optimized to provide maximum dynamic range. This operational amplifier (op amps) features a unique combination of rail-to-rail operation on the input and output as well as a slew-enhanced front-end that provides ultra-fast slew rates positively proportional to a given step size, thereby increasing accuracy under transient conditions, whether it's periodic or momentary. The ISL73444SEH also offers low power, low offset voltage, and low-temperature drift, mak | ISL73444SEHVF |
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ISL73062SEHVX
Renesas Electronics
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1 | The ISL73062SEH is a radiation hardened single channel load switch featuring ultra-low rON and controlled rise time. This device uses a NMOS pass device as the main switch that operates across an input voltage range of 0V to (VCC -2V) and can support a maximum of 10A continuous current. The device has a VCC pin to power the logic and driver. The VCC voltage range is 3V to 5.5V. Simple ON/OFF digital control inputs make the device capable of interfacing directly with low voltage control signals from an FPGA, | ISL73062SEHVX |
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ISL73840SEHX/SAMPLE
Renesas Electronics
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1 | The ISL73840SEH is a radiation tolerant, 16-channel high ESD protected multiplexer fabricated using the Renesas proprietary P6SOI (Silicon On Insulator) process technology. It operates with a dual supply voltage ranging from ±10. 8V to ±16. 5V. It has a 4-bit address plus an enable pin that can be driven with adjustable logic thresholds to conveniently select one of 16 available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any interaction between them | ISL73840SEHX/SAMPLE |
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ISL73096RHF/PROTO
Renesas Electronics
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1 | The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a common substrate. The ISL73096EH, ISL73127EH and ISL73128EH devices encompass all of the production testing of the ISL73096RH, ISL73127RH and ISL73128RH devices and additionally are tested in the Intersil Enhance | ISL73096RHF/PROTO |
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ISL73841SEHVF
Renesas Electronics
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1 | The ISL73841SEH is a radiation tolerant, 32-channel high ESD protected multiplexer fabricated using the proprietary Renesas P6SOI (Silicon On Insulator) process technology. It operates with a dual supply voltage ranging from ±10. 8V to ±16. 5V. It has a 5-bit address plus an enable pin that can be driven with adjustable logic thresholds to conveniently select one of 32 available channels. An inactive channel is separated from an active channel by a high impedance, which inhibits any interaction between the | ISL73841SEHVF |
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ISL73847SEHF/PROTO
Renesas Electronics
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1 | Radiation Hardened Single/Dual Phase Current Mode PWM Controller | ISL73847SEHF/PROTO |
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ISL738840ASEHVX/PROTO
Renesas Electronics
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1 | Radiation Hardened, High Performance Industry Standard Single-Ended Current Mode PWM Controller | ISL738840ASEHVX/PROTO |
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ISL73840SEHVX
Intersil Corporation
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1 | Single-Ended Multiplexer | ISL73840SEHVX |
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ISL73051ASEHF/PROTO
Integrated Device Technology Inc
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1 | Adjustable Positive LDO Regulator | ISL73051ASEHF/PROTO |
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ISL73096RHVF
Intersil Corporation
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1 | RF POWER TRANSISTOR | ISL73096RHVF |
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