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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	JANSH2N2221AUA Defense Logistics Agency	0	Small Signal Bipolar Transistor, 0.0008A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,	JANSH2N2221AUA	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7432U International Rectifier	1	Power Field-Effect Transistor, 51A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN	JANSH2N7432U	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N2221AUA Microsemi Corporation	1	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4	JANSH2N2221AUA	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7394 International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	JANSH2N7394	3D model not available Symbol and footprint not available 0	0 Build or Request

	JANSH2N7483T3 Infineon Technologies AG	0	Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3	JANSH2N7483T3	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7269U International Rectifier	1	Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN	JANSH2N7269U	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7494U5 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18	JANSH2N7494U5	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7496U5 Infineon Technologies AG	1	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	JANSH2N7496U5	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7479U3 Infineon Technologies AG	1	Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN	JANSH2N7479U3	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7470T1 International Rectifier	1	Power Field-Effect Transistor, 45A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3	JANSH2N7470T1	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7484T3 Infineon Technologies AG	1	Power Field-Effect Transistor, 18A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN	JANSH2N7484T3	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7491T2 Infineon Technologies AG	1	Power Field-Effect Transistor, 12A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN	JANSH2N7491T2	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N2221AUBC Microsemi Corporation	1	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4	JANSH2N2221AUBC	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7262U International Rectifier	1	Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18	JANSH2N7262U	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7467U2 Infineon Technologies AG	1	Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN	JANSH2N7467U2	3D model not available Symbol and footprint not available 0	0 Build or Request

	JANSH2N7268U Infineon Technologies AG	1	Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN	JANSH2N7268U	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7270D International Rectifier	1	Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	JANSH2N7270D	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7431 Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3	JANSH2N7431	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N2222A Microsemi Corporation	1	Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN	JANSH2N2222A	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7261 International Rectifier	1	Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN	JANSH2N7261	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7493T2 International Rectifier	1	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN	JANSH2N7493T2	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7495U5 Infineon Technologies AG	0	Power Field-Effect Transistor, 11.7A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18	JANSH2N7495U5	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N2222A Defense Logistics Agency	0	Small Signal Bipolar Transistor, 0.0008A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-18, 3 PIN	JANSH2N2222A	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7481U3 International Rectifier	1	Power Field-Effect Transistor, 22A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN	JANSH2N7481U3	3D model not available Symbol and footprint not available 0	0 Build or Request
	JANSH2N7493T2 Infineon Technologies AG	1	Power Field-Effect Transistor, 11.7A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN	JANSH2N7493T2	3D model not available Symbol and footprint not available 0	0 Build or Request
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