JMSL0 Footprint, Symbol and 3D Model search results

Showing 25 of 76 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	JMSL0608PP Jiangsu JieJie Microelectronics Co Ltd	1	60V, 13A, 9.4mΩ N-channel Power SGT MOSFET in SOP-8 package with low gate charge, excellent RDS(ON), and 100% UIS tested, suitable for load switch, PWM, and power management applications.	JMSL0608PP	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0612AUQ Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-channel Power MOSFET in PDFN3x3-8L package with 10.0 mΩ typical RDS(ON) at VGS = 10 V, 36 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications.	JMSL0612AUQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0315AV Jiangsu JieJie Microelectronics Co Ltd	1	30 V N-channel power MOSFET in U-DFN2020-6L package with 7.2 mΩ typical RDS(ON) at 10 V VGS, 22 A continuous drain current, and low gate charge for power management applications.	JMSL0315AV	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0609AP Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-Ch Power MOSFET in SOP-8L package with 7.5 mΩ typical RDS(ON) at 10V VGS, 13.6 A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0609AP	3D model not available Symbol and footprint not available 0	0 Build or Request

	JMSL0606AGD Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel power MOSFET with 55A continuous drain current, 6.4mΩ RDS(ON) at VGS=10V, 32nC total gate charge, and 1.8Ω gate resistance in a PDFN5x6-8L package.	JMSL0606AGD	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0615AUD Jiangsu JieJie Microelectronics Co Ltd	1	Dual N-Ch Power MOSFET with 60 V drain-source voltage, 24 A continuous drain current, 11.0 mΩ typical RDS(ON) at VGS = 10V, and 14.0 mΩ at VGS = 4.5V, housed in a PDFN3x3-8L-D package.	JMSL0615AUD	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0620AGE Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in PDFN5x6-8L package with 16 mΩ typical RDS(ON) at VGS = 10V, 31A continuous drain current, low gate charge, and ESD-protected gate.	JMSL0620AGE	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0606AKQ Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-Ch Power MOSFET in TO-252-3L package with 4.6 mΩ typical RDS(ON) at 10 V VGS, 93 A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications.	JMSL0606AKQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0606AK Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in TO-252-3L package with 4.6 mΩ RDS(ON) at 10V VGS, 90A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0606AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0606AP Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in SOP-8L package with 5.3 mΩ typical RDS(ON) at 10V VGS, 15A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0606AP	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0406AK Jiangsu JieJie Microelectronics Co Ltd	1	40 V N-channel Power MOSFET in TO-252-3L package with 4.5 mΩ typical RDS(ON) at 10 V VGS, 73 A continuous drain current, and low gate charge for power management applications.	JMSL0406AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0603PG Jiangsu JieJie Microelectronics Co Ltd	1	60V, 154A, 2.7mΩ N-channel Power SGT MOSFET in PDFN5x6-8L package with low gate charge, suitable for load switch, PWM, and power management applications.	JMSL0603PG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0612AKQ Jiangsu JieJie Microelectronics Co Ltd	1	60V 9.9mΩ N-Ch Power MOSFET in TO-252-3L package, featuring low RDS(ON), low gate charge, 57A continuous drain current, and AEC-Q101 qualification for automotive applications.	JMSL0612AKQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0612AG Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-channel Power MOSFET in PDFN5x6-8L package with 9.5 mΩ typical RDS(ON) at VGS = 10V, 34 A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0612AG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0315AP Jiangsu JieJie Microelectronics Co Ltd	1	30V N-channel Power MOSFET in SOP-8L package with 8.2 mΩ typical RDS(ON) at VGS = 10V, 14A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0315AP	3D model not available Symbol and footprint not available 0	0 Build or Request

	JMSL0606AUQ Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in PDFN3x3-8L package with 5.0 mΩ typical RDS(ON) at VGS = 10V, 6.0 mΩ at VGS = 4.5V, 59A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications.	JMSL0606AUQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0303AK Jiangsu JieJie Microelectronics Co Ltd	1	30V, 118A N-channel Power MOSFET in TO-252-3L package with 2.7mΩ RDS(ON) at VGS = 10V, featuring low gate charge, high current capability, and 100% UIS tested for power management and motor driving applications.	JMSL0303AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0402AK Jiangsu JieJie Microelectronics Co Ltd	1	40V N-channel Power MOSFET in TO-252-3L package with 1.8 mΩ RDS(ON) at VGS = 10V, 150A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0402AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0302AGND Jiangsu JieJie Microelectronics Co Ltd	1	30V dual asymmetric N-channel power MOSFET in DFN5060-8L-C package with 3.7 mΩ and 1.7 mΩ typical RDS(ON) at 4.5V VGS, designed for DC/DC conversion and power management applications.	JMSL0302AGND	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0608PG Jiangsu JieJie Microelectronics Co Ltd	1	60V, 79A, 8mΩ N-channel Power Trench MOSFET in PDFN5x6-8L package with low RDS(ON), high current capability, and 100% UIS tested for power management and load switch applications.	JMSL0608PG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0603BGQ Jiangsu JieJie Microelectronics Co Ltd	1	60 V N-Ch Power MOSFET in PDFN5x6-8L package with 2.4 mΩ typical RDS(ON) at 10 V VGS, 147 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications.	JMSL0603BGQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0609AG Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in PDFN5x6-8L package with 7.2 mΩ typical RDS(ON) at 10V VGS, 43A continuous drain current, low gate charge, and 100% UIS tested for power management applications.	JMSL0609AG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0609AUQ Jiangsu JieJie Microelectronics Co Ltd	1	60V N-channel Power MOSFET in PDFN3x3-8L package with 7.5 mΩ typical RDS(ON) at 10V VGS, low gate charge, and AEC-Q101 qualification for automotive applications.	JMSL0609AUQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0602AG Jiangsu JieJie Microelectronics Co Ltd	1	60V N-Ch Power MOSFET in PDFN5x6-8L package with 1.8 mΩ typical RDS(ON) at 10V VGS, 154A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications.	JMSL0602AG	3D model not available Symbol and footprint not available 0	0 Build or Request
	JMSL0307AG Jiangsu JieJie Microelectronics Co Ltd	1	30V N-channel Power MOSFET in PDFN5x6-8L package with 3.8 mΩ typical RDS(ON) at VGS = 10V, 65A continuous drain current, low gate charge, and 100% UIS tested for power management and motor driving applications.	JMSL0307AG	3D model not available Symbol and footprint not available 0	0 Build or Request
1 2 3 4

Can't find what you're looking for? Request this part

JMSL0 Model Download Search Results

Popular Power Field-Effect Transistors