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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image
EKM-B1109111 Panasonic
1 Sensor PIR (Passive Infrared)0002 Other EKM-B1109111 1 Download Model
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TPSMB110CA-EVR LITTELFUSE
1 TVS Diode, Surface Mount ? 600 W, Bi-directional, DO-214AA Other TPSMB110CA-EVR 1 Download Model
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TPSMB11A-E LITTELFUSE
1 TVS Diode, Surface Mount ? 600 W, Uni-directional, DO-214AA Other TPSMB11A-E 1 Download Model
Part Image Part Image 1  Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w BGA W631GG8MB11W 1 Download Model
Part Image Part Image 1 2Gb DDR3 SDRAM 1866MHz VFBGA96 BGA W632GU6MB11S 1 Download Model
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SI5338M-B11133-GM Silicon Labs
1 2C-PROGRAMMABLE ANY-FREQUENCY, ANY-OUTPUT QUAD CLOCK GENERATOR Quad Flat No-Lead SI5338M-B11133-GM 1 Download Model
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EKM-B1104113 Panasonic
1 Sensor PIR (Passive Infrared)0002 Other EKM-B1104113 1 Download Model
Part Image Part Image 1  Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V Backward compatible to VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, d BGA W631GU6MB11W 1 Download Model
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EKMB1109111 Panasonic
1 Sensor Motion, Pyroelectric, PIR (Passive Infrared) 161" (4.1m) 13.5' Ultra Slight Motion Lens, White Module -20°C ~ 60°C Other EKMB1109111 1 Download Model
Part Image Part Image 1 2Gb DDR3 SDRAM 1866MHz VFBGA96 BGA W632GU6MB11A 1 Download Model
Part Image Part Image 1 2Gb DDR3 SDRAM 1866MHz VFBGA96 BGA W632GU6MB11K 1 Download Model
Part Image Part Image 1 P6SMB-Q Transient Voltage Suppressor Diode Series, Uni-Directional Diodes Moulded P6SMB110A-Q 1 Download Model
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G832MB110605322HR Amphenol Communications Solutions
1 0.80mm Board-to-Board 85Ω Connector, Pitch 0.8mm, Height 7.7 mm, 60 Positions, Dual Row, BTB Vertical Plug SMT, 8μin Gold Black. Other G832MB110605322HR 1 Download Model
Part Image Part Image 1 Transient Voltage Suppressors - P6SMB11CA-AU , AEC-Q101, BI, 600W, Min.9.4V, Max.11.6V, SMB Diodes Moulded Non Polarised P6SMB11CA-AU 1 Download Model
Part Image Part Image 1  Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w BGA W631GG6MB11S 1 Download Model
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P6SMB110AJ Nexperia
1 600 W Transient Voltage Suppressor 7.02 V to 214 V SMB (SOD1002-1) Diodes Moulded P6SMB110AJ 1 Download Model
Part Image Part Image 1 Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit BGA W631GG6MB11A 1 Download Model
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GRM31MB11H124JA01K Murata Electronics
1 Chip Multilayer Ceramic Capacitors for General Purpose, 1206 (3216M) Other GRM31MB11H124JA01K 1 Download Model
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PRMB11-QZ Nexperia
1 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 10 k, R2 = 10 k Other PRMB11-QZ 1 Download Model
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EKMB1101112 Panasonic
1 EKMB1101112 Panasonic, EKMB1 PIR Sensor Pyroelectric Infrared Sensor, 5m 3-Pin TO-5 Other EKMB1101112 1 Download Model
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GRM31MB11A225KA01K Murata Electronics
1 Chip Multilayer Ceramic Capacitors for General Purpose, 1206 (3216M) Other GRM31MB11A225KA01K 1 Download Model
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EKM-B1103113 Panasonic
1 Sensor PIR (Passive Infrared) 472" (12m) 39.4' Polyethylene, Pearl White Lens, 1µA Other EKM-B1103113 1 Download Model
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EKM-B1101111 Panasonic
1 EKMB1101111 Panasonic, EKMB1 PIR Sensor Pyroelectric Infrared Sensor, 5m 3-Pin TO-5 1µA Other EKM-B1101111 1 Download Model
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GRM31MB11H124JA01L Murata Electronics
1 Chip Multilayer Ceramic Capacitors for General Purpose, 1206 (3216M) Other GRM31MB11H124JA01L 1 Download Model
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NHUMB11X Nexperia
1 Bipolar Transistors - BJT NHUMB11/SOT363/SC-88 SOT23 (6-Pin) NHUMB11X 1 Download Model
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