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MBRS1100
SUNMATE electronic Co., LTD
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1 | Surface mount Schottky barrier diode MBRS120-MBRS1100 with 1.0 A average rectified current, 20-100 V reverse voltage range, 30 A peak forward surge current, low forward voltage drop, and operating junction temperature from -65 to +125 °C. | MBRS1100 |
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MBRS180
SUNMATE electronic Co., LTD
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1 | Surface mount Schottky barrier diode MBRS120-MBRS1100 with 1.0A average rectified current, 20-100V DC blocking voltage, 30A peak forward surge current, low forward voltage drop, and operating junction temperature from -65 to +125°C. | MBRS180 |
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MBRS130
CREATEK Microelectronics
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1 | Schottky Barrier Rectifier MBRS130 in DO-214AC/SMA package, 30V maximum repetitive peak reverse voltage, 1.0A average forward rectified current, low forward voltage drop, suitable for high frequency inverters and polarity protection applications. | MBRS130 |
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MBRS160
SUNMATE electronic Co., LTD
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1 | Surface mount Schottky barrier diode MBRS120 to MBRS1100 with 1.0 A average rectified current, 20 to 100 V DC blocking voltage, 30 A non-repetitive peak forward surge current, and low forward voltage drop.Surface mount Schottky barrier diode MBRS120-MBRS1100 with 1.0A average rectified current, 20-100V DC blocking voltage, 30A peak forward surge current, low forward voltage drop, and operating junction temperature from -65 to +125°C.Surface mount Schottky barrier diode MBRS120-MBRS1100 with 1.0A average rectified current, 20-100V DC blocking voltage, 30A peak forward surge current, low forward voltage drop, and operating junction temperature from -65 to +125°C.Surface mount Schottky barrier diode MBRS120-MBRS1100 with 1.0 A average rectified current, 20-100 V reverse voltage range, 30 A peak forward surge current, low forward voltage drop, and operating junction temperature from -65 to +125 °C.Surface mount Schottky barrier diode MBRS120-MBRS1100 with 1.0 A average rectified current, 20-100 V DC blocking voltage, 30 A peak forward surge current, low forward voltage drop, and operating junction temperature from -65 to +125°C.Surface mount Schottky barrier diode MBRS120–MBRS1100 with 1.0 A average rectified current, 20–100 V DC blocking voltage, low forward voltage drop, and surge current rating of 30 A at 8.3 ms.Surface mount Schottky barrier diode MBRS120 to MBRS1100, 1.0A average rectified current, 20-100V DC blocking voltage, 30A peak forward surge current, low forward voltage drop, suitable for automatic assembly in low voltage applications. | MBRS160 |
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MBRS1035H
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 35V V(RRM), Silicon, TO-263AB | MBRS1035H |
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MBRS170T3
Motorola Semiconductor Products
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 70V V(RRM), Silicon | MBRS170T3 |
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MBRS1635RN
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 35V V(RRM), Silicon, TO-263AB | MBRS1635RN |
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MBRS15150CT-YC0G
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 7.5A, 150V V(RRM), Silicon, TO-263AB | MBRS15150CT-YC0G |
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MBRS10100HMNG
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-263AB | MBRS10100HMNG |
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MBRS1550CTHRN
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 7.5A, 50V V(RRM), Silicon, TO-263AB | MBRS1550CTHRN |
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MBRS1650HMNG
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 50V V(RRM), Silicon, TO-263AB | MBRS1650HMNG |
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MBRS1545CT-YC0
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 7.5A, 45V V(RRM), Silicon, TO-263AB | MBRS1545CT-YC0 |
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MBRS10H100CTC0G
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-263AB | MBRS10H100CTC0G |
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MBRS190TR
Microsemi Corporation (now Microchip)
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 90V V(RRM), Silicon, DO-214BA | MBRS190TR |
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MBRS1090HRNG
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 90V V(RRM), Silicon, TO-263AB | MBRS1090HRNG |
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MBRS1545CT-YRN
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 7.5A, 45V V(RRM), Silicon, TO-263AB | MBRS1545CT-YRN |
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MBRS1060HCTHC0
Taiwan Semiconductor
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1 | RECTIFIER DIODE | MBRS1060HCTHC0 |
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MBRS1690HMNG
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 90V V(RRM), Silicon, TO-263AB | MBRS1690HMNG |
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MBRS15200CT-YRNG
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 7.5A, 200V V(RRM), Silicon, TO-263AB, D2PAK-3/2 | MBRS15200CT-YRNG |
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MBRS120T3
EIC Semiconductor Inc
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 20V V(RRM), Silicon, DO-214AA | MBRS120T3 |
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MBRS10H150CTC00HE3TU
Fagor Electrónica
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, TO-263AB | MBRS10H150CTC00HE3TU |
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MBRS1635HC0
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 35V V(RRM), Silicon, TO-263AB | MBRS1635HC0 |
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MBRS1035CTG
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 35V V(RRM), Silicon | MBRS1035CTG |
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MBRS10150CTC0G
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 150V V(RRM), Silicon, TO-263AB | MBRS10150CTC0G |
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MBRS15100CTRN
Taiwan Semiconductor
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 7.5A, 100V V(RRM), Silicon, TO-263AB | MBRS15100CTRN |
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