MJD21 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	MJD210G-TN3-T Unisonic Technologies Co Ltd	1	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin		MJD210G-TN3-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD210G-TN3-R Unisonic Technologies Co Ltd	1	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin		MJD210G-TN3-R	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD210G-TM3-T Unisonic Technologies Co Ltd	1	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plastic/Epoxy, 3 Pin		MJD210G-TM3-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD210TF onsemi	1	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin		MJD210TF	3D model not available Symbol and footprint not available 0	0 Build or Request

	MJD210 Fairchild Semiconductor Corporation	1	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin		MJD210	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD210-TM3-T Unisonic Technologies Co Ltd	1	Power Bipolar Transistor		MJD210-TM3-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD210T4 STMicroelectronics	1	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin		MJD210T4	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD210RL Motorola Semiconductor Products	1	Power Bipolar Transistor, 5A I(C), 1-Element, PNP		MJD210RL	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD210RL onsemi	1	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin		MJD210RL	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD210-1 onsemi	1	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin		MJD210-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD210L-TN3-T Unisonic Technologies Co Ltd	1	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin		MJD210L-TN3-T	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD210L-TN3-R Unisonic Technologies Co Ltd	1	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin		MJD210L-TN3-R	3D model not available Symbol and footprint not available 0	0 Build or Request
	NJVMJD210T4G onsemi	1	MJD200 is the complementary NPN device; High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; These Devices are Pb-Free and are RoHS Compliant; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Contro		NJVMJD210T4G	3D model available Symbol and footprint not available 1	1 Download Model

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