MJD30 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
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MJD3055 Galaxy Microelectronics
1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin MJD3055 0 Build or Request
Part Image Part Image 1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin MJD3055-1 0 Build or Request
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MJD3055-1 Samsung Semiconductor
1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin MJD3055-1 0 Build or Request
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MJD3055 Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin MJD3055 0 Build or Request
Part Image Part Image 1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MJD3055T4 0 Build or Request
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MJD3055 Galaxy Semi-Conductor Co Ltd
1 Power Bipolar Transistor, MJD3055 0 Build or Request
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MJD3055T4 Motorola Semiconductor Products
1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin MJD3055T4 0 Build or Request
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MJD3055TF Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin MJD3055TF 0 Build or Request
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MJD3055 JCET Group
1 NPN transistor in TO-252-2L package, designed for general purpose amplifier and low speed switching applications, with collector current up to 10 A, VCEO of 60 V, and DC current gain specified at high current levels. MJD3055 0 Build or Request
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MJD3055T4 Rochester Electronics LLC
1 10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369C-01, DPAK-3 MJD3055T4 0 Build or Request
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MJD3055 Samsung Semiconductor
1 Power Bipolar Transistor, 10A I(C), 1-Element, NPN MJD3055 0 Build or Request
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MJD3055-I Fairchild Semiconductor Corporation
1 10 A, 60 V, NPN, Si, POWER TRANSISTOR, IPAK-3 MJD3055-I 0 Build or Request
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MJD3055 Rochester Electronics LLC
1 10A, 60V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369C-01, DPAK-3 MJD3055 0 Build or Request
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MJD3055-1 Freescale Semiconductor
1 TRANSISTOR,BJT,NPN,60V V(BR)CEO,10A I(C),TO-251 MJD3055-1 0 Build or Request
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MJD3055(TO-251) Jiangsu Changjiang Electronics Technology Co Ltd
1 Transistor MJD3055(TO-251) 0 Build or Request
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MJD30C Freescale Semiconductor
1 TRANSISTOR,BJT,PNP,100V V(BR)CEO,1A I(C),TO-252 MJD30C 0 Build or Request
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MJD3055 Freescale Semiconductor
1 TRANSISTOR,BJT,NPN,60V V(BR)CEO,10A I(C),TO-252 MJD3055 0 Build or Request
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MJD3055-1 Motorola Semiconductor Products
1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin MJD3055-1 0 Build or Request
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MJD3055I Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin MJD3055I 0 Build or Request
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MJD3055(TO-252-2L) Jiangsu Changjiang Electronics Technology Co Ltd
1 Transistor MJD3055(TO-252-2L) 0 Build or Request
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MJD3055 Taitron Components Inc
1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin MJD3055 0 Build or Request
Part Image Part Image 1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin MJD3055TF 0 Build or Request
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MMJD3055-TP Micro Commercial Components
1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin MMJD3055-TP 0 Build or Request
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MMJD3055-TP-HF Micro Commercial Components
1 Power Bipolar Transistor MMJD3055-TP-HF 0 Build or Request
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