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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NANOSMDC125F TE Connectivity	1	PTC Thermistor, Surface Mount		NANOSMDC125F	3D model not available Symbol and footprint not available 0	0 Build or Request
	NANOSMDM050-2 TE Connectivity	1	PTC Thermistor, 0.4ohm, Surface Mount		NANOSMDM050-2	3D model not available Symbol and footprint not available 0	0 Build or Request
	NANOSMDC016F-2 TE Connectivity	1	PTC Thermistor, 5ohm, Surface Mount, CHIP, 1307, ROHS COMPLIANT		NANOSMDC016F-2	3D model not available Symbol and footprint not available 0	0 Build or Request
	NANOSMD200LR-2 TE Connectivity	1	RESISTOR, TEMPERATURE DEPENDENT, PTC		NANOSMD200LR-2	3D model not available Symbol and footprint not available 0	0 Build or Request

	BYT56B SUNMATE electronic Co., LTD	1	Fast recovery rectifier diodes in DO-201AD package with 50 to 1000V reverse voltage range, 3.0A average forward current, low forward voltage drop, high surge current capability, and reverse recovery time specified at 35ns.Fast recovery rectifier diodes in DO-201AD package, 3.0A average forward current, 50-1000V reverse voltage range, low forward voltage drop, high surge current capability, reverse recovery time specified at 35ns.Fast recovery rectifier diodes BYT56A-BYT56M with 50-1000V voltage range, 3.0A average forward current, low forward voltage drop, high surge current capability, and reverse recovery time specified at 35ns, suitable for high-efficiency applications.Fast recovery rectifier diodes BYT56A-BYT56M with 50-1000V voltage range, 3.0A average forward current, low forward voltage drop, high surge current capability, and reverse recovery time specified at 50ns, suitable for high-efficiency applications.Fast recovery rectifier diodes in DO-201AD package with 3.0 A average forward current, 50 to 1000 V reverse voltage range, low forward voltage drop, and high surge current capability.Fast recovery rectifier diodes BYT56A-BYT56M with 50-1000V voltage range, 3.0A average forward current, low forward voltage drop, high surge current capability, and reverse recovery time in nanoseconds, suitable for high-efficiency applications.		BYT56B	3D model not available Symbol and footprint not available 0	0 Build or Request
	CP0080SBC Jiangsu JieJie Microelectronics Co Ltd	1	CP0080SBC is a bidirectional thyristor surge protection device with 80 A peak pulse current handling capability, low capacitance, and fast nanosecond-level response for transient voltage suppression in telecommunications and baseband equipment.		CP0080SBC	3D model not available Symbol and footprint not available 0	0 Build or Request
	ES1GF (ER1GF) Shenzhen Heketai Electronics Co Ltd	1	Super fast recovery rectifier diode in SMAF surface mount package, with reverse voltage ratings from 50V to 600V, low forward voltage drop, high surge current capability, and reverse recovery time specified at 30ns, designed for high-efficiency power applications.Super fast recovery rectifier diode in SMAF surface mount package, with reverse voltage ratings from 50V to 600V, low forward voltage drop, high surge current capability, and reverse recovery time of 30ns, suitable for high-efficiency power applications.Super fast recovery rectifier diode in SMAF surface mount package, with reverse voltage ratings from 50V to 600V, low forward voltage drop, high surge current capability, and reverse recovery time of 30ns, suited for high-efficiency power applications.Super fast recovery rectifier diode in SMAF surface mount package, with reverse voltage ratings from 50V to 600V, low forward voltage drop, high surge current capability, and reverse recovery time typically in nanoseconds, suited for high-efficiency power applications.		ES1GF (ER1GF)	3D model not available Symbol and footprint not available 0	0 Build or Request
	CP3100SE Jiangsu JieJie Microelectronics Co Ltd	1	CP3100SE is a low capacitance bidirectional semiconductor device in SMB package, designed for overvoltage protection with 6000V peak pulse voltage, 2.2A on-state current, and fast nanosecond-level surge response.		CP3100SE	3D model not available Symbol and footprint not available 0	0 Build or Request
	MUR415 SUNMATE electronic Co., LTD	1	Super fast rectifier diode with 50 to 600 V reverse voltage range, 4.0 A average forward current, 100 A peak surge current, low forward voltage drop of 1.25 V at 1.0 A, and reverse recovery time in nanoseconds.		MUR415	3D model not available Symbol and footprint not available 0	0 Build or Request
	P4200TB Jiangsu JieJie Microelectronics Co Ltd	1	P4200TB is a bidirectional semiconductor device in SMA package, designed for overvoltage protection with 400V peak off-state voltage, 80A peak pulse current, low on-state voltage, and fast nanosecond-level response to transient surges.		P4200TB	3D model not available Symbol and footprint not available 0	0 Build or Request
	MUR450 SUNMATE electronic Co., LTD	1	Super fast rectifier diodes in DO-201AD package with 4.0A average forward current, 50 to 600V reverse voltage range, low forward voltage drop, high surge current capability, and reverse recovery time specified under defined test conditions.Super fast rectifier diode with 50 to 600 V reverse voltage range, 4.0 A average forward current, 100 A peak surge current, low forward voltage drop of 1.25 V at 1.0 A, and reverse recovery time in nanoseconds.		MUR450	3D model not available Symbol and footprint not available 0	0 Build or Request
	MUR440 SUNMATE electronic Co., LTD	1	Super fast rectifier diodes in DO-201AD package with 4.0A average forward current, 50 to 600V reverse voltage range, low forward voltage drop, high surge current capability, and reverse recovery time specified under defined test conditions.Super fast rectifier diode with 50 to 600 V reverse voltage range, 4.0 A average forward current, 100 A peak surge current, low forward voltage drop of 1.25 V at 1.0 A, and reverse recovery time in nanoseconds.		MUR440	3D model not available Symbol and footprint not available 0	0 Build or Request
	ES1BF (ER1BF) Shenzhen Heketai Electronics Co Ltd	1	Super fast recovery rectifier diode in SMAF surface mount package, with reverse voltage ratings from 50V to 600V, low forward voltage drop, high surge current capability, and reverse recovery time typically in nanoseconds, suited for high-efficiency power applications.		ES1BF (ER1BF)	3D model not available Symbol and footprint not available 0	0 Build or Request
	P0641SAP Jiangsu JieJie Microelectronics Co Ltd	1	Pxxx1SAP series thyristors are semiconductor components designed for transient surge protection, featuring high surge current capability, fast response time in nanoseconds, and a peak off-state voltage range from 28V to 60V, suitable for overvoltage protection applications.		P0641SAP	3D model not available Symbol and footprint not available 0	0 Build or Request

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