NCE01 Footprint, Symbol and 3D Model search results

Showing 25 of 77 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	NCE0106AR NCEPOWER	1	NCE0106AR N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 6A continuous drain current, RDS(ON) less than 130mΩ at VGS=10V, and low gate charge for high-frequency switching applications.	NCE0106AR	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0115K NCEPOWER	1	NCE0115K N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 15A continuous drain current, 80mΩ typical RDS(ON) at VGS=10V, and 22.3nC total gate charge, suitable for power switching and high-frequency applications.	NCE0115K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0102B NCEPOWER	1	NCE0102B N-Channel Enhancement Mode MOSFET with 100V drain-source voltage, 1.8A continuous drain current, and low RDS(ON) of 530mΩ typical at VGS=10V, utilizing trench technology for high efficiency in power switching applications.	NCE0102B	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0102 NCEPOWER	1	NCE0102 is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 2A continuous drain current, and low on-resistance of 190mΩ typical at 10V gate-source voltage, suitable for power switching and high-frequency applications.	NCE0102	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE0117 NCEPOWER	1	NCE0117 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 17A continuous drain current, RDS(ON) less than 70mΩ at VGS=10V, and low gate charge for high-efficiency switching applications.	NCE0117	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0157AK NCEPOWER	1	NCE0157AK N-Channel Enhancement Mode MOSFET with 100V VDS, 57A ID, and 16mΩ RDS(ON) at 10V VGS, featuring high ESD capability, low gate charge, and TO-252-2L package for power switching applications.	NCE0157AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0106R NCEPOWER	1	NCE0106R is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 6A continuous drain current, and low on-resistance of 103mΩ typical at 10V gate-source voltage, suitable for power switching and high-frequency applications.	NCE0106R	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0105M NCEPOWER	1	NCE0105M is a channel enhancement mode power MOSFET with 100V drain-source voltage, 5A continuous drain current, and low on-resistance of 82mΩ typical at 10V VGS, using advanced trench technology for high efficiency in switching applications.	NCE0105M	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE01P35K NCEPOWER	1	NCE01P35K is a P-channel enhancement mode power MOSFET with -100V drain-source voltage, -35A continuous drain current, and low on-resistance of 30mΩ typical at VGS=-10V, fabricated using advanced trench technology for high density and reliability.	NCE01P35K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0130KA NCEPOWER	1	NCE0130KA is an N-channel enhancement mode power MOSFET with 100V drain-source voltage, 30A continuous drain current, and low RDS(ON) of 25mΩ typical at VGS=10V, utilizing trench technology for high efficiency in switching applications.	NCE0130KA	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0140K2 NCEPOWER	1	NCE0140K2 is a Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 40A continuous drain current, and low on-resistance of 13mΩ typical at VGS=10V, designed for high-frequency switching applications.	NCE0140K2	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE01H13 NCEPOWER	1	NCE01H13 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and 6.8mΩ typical RDS(ON) at 10V gate-source voltage, featuring advanced trench technology for low on-resistance and high switching performance.	NCE01H13	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE011N30GU NCEPOWER	1	NCE011N30GU is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 325A continuous drain current, and low on-resistance of 0.75mΩ at VGS=10V, housed in a DFN5x6-8L package.	NCE011N30GU	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0102A NCEPOWER	1	NCE0102A N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 2A continuous drain current, and 240mΩ RDS(ON) at 10V VGS, suitable for power switching and high-frequency applications.	NCE0102A	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE01H10D NCEPOWER	1	NCE01H10D is a channel enhancement mode power MOSFET with 100V drain-source voltage, 100A continuous drain current, and low on-state resistance of 9.9mΩ typical at VGS=10V, featuring advanced trench technology for high efficiency in power switching applications.	NCE01H10D	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE0104AN NCEPOWER	1	NCE0104AN N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 4A continuous drain current, RDS(ON) less than 100mΩ at VGS=10V, and low gate charge for high-frequency switching applications.	NCE0104AN	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0117K NCEPOWER	1	NCE0117K N-Channel Enhancement Mode MOSFET with 100V drain-source voltage, 17A continuous drain current, 56mΩ typical RDS(ON) at 10V VGS, and 30nC total gate charge, suitable for power switching and high frequency applications.	NCE0117K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0110AS NCEPOWER	1	NCE0110AS N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 10A continuous drain current, and low on-resistance of 14mΩ typical at VGS=10V, utilizing trench technology for high efficiency in DC/DC and telecom applications.	NCE0110AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0106Z NCEPOWER	1	NCE0106Z N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 6A continuous drain current, and 140mΩ maximum RDS(ON) at 10V gate-source voltage, designed for high-frequency switching applications.	NCE0106Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0157 NCEPOWER	1	NCE0157 N-channel enhancement mode power MOSFET with 100V drain-source voltage, 57A continuous drain current, and 16mΩ typical RDS(ON) at 10V VGS, featuring low gate charge and high ESD capability.	NCE0157	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0108AS NCEPOWER	1	NCE0108AS N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 8A continuous drain current, and 22mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low gate charge and high efficiency in DC/DC and telecom applications.	NCE0108AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE01NP03S NCEPOWER	1	NCE01NP03S is an N-channel and P-channel enhancement mode power MOSFET in SOP-8 package, featuring 100V drain-source voltage, 3A continuous drain current, low RDS(ON) of 130mΩ (N-channel) and 200mΩ (P-channel), and advanced trench technology for high efficiency.	NCE01NP03S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0157G NCEPOWER	1	NCE0157G is a 100V, 57A NCEN-Channel Enhancement Mode Power MOSFET with advanced trench technology, offering low RDS(ON) of 12.5mΩ at VGS=10V, suitable for high-frequency switching and DC/DC conversion applications.	NCE0157G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0107AK NCEPOWER	1	NCE0107AK N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 7A continuous drain current, and low on-resistance of 136mΩ typical at VGS=10V, utilizing advanced trench technology for high efficiency in power switching applications.	NCE0107AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE0140KA NCEPOWER	1	NCE0140KA is an N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 40A continuous drain current, and low RDS(ON) of 17mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance.	NCE0140KA	3D model not available Symbol and footprint not available 0	0 Build or Request
1 2 3 4

Can't find what you're looking for? Request this part

NCE01 Model Download Search Results

Popular Small Signal Field-Effect Transistors