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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	NCE3018AS NCEPOWER	1	NCE3018AS is an N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 18A continuous drain current, and low on-resistance of 7mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in power switching applications.	NCE3018AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3050 NCEPOWER	1	NCE3050 is an N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 50A continuous drain current, and low on-resistance of 11mΩ at VGS=10V, featuring high cell density design for efficient power switching applications.	NCE3050	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P55K NCEPOWER	1	NCE30P55K is a -30V, -55A P-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 8.0 mΩ at VGS = -10V and 17 mΩ at VGS = -4.5V, suitable for high current load applications.	NCE30P55K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H11BG NCEPOWER	1	NCE30H11BG is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and low on-resistance of 2.3mΩ at VGS=10V, using advanced trench technology for high efficiency in switching applications.	NCE30H11BG	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE3080IA NCEPOWER	1	NCE3080IA N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 80A continuous drain current, RDS(ON) less than 6.5mΩ at VGS=10V, advanced trench technology for low on-resistance and gate charge, suitable for power switching and high frequency applications.	NCE3080IA	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H10 NCEPOWER	1	NCE30H10 is a channel enhancement mode power MOSFET with 30V drain-source voltage, 100A continuous drain current, and ultralow RDS(ON) of 4mΩ typical at VGS=10V, designed for high-frequency switching applications.	NCE30H10	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H15 NCEPOWER	1	NCE30H15 is a channel enhancement mode power MOSFET with 30V drain-source voltage, 150A continuous drain current, and low on-resistance of less than 3.0mΩ at VGS=10V, using advanced trench technology for high efficiency and thermal performance.	NCE30H15	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H10BG NCEPOWER	1	NCE30H10BG is a Channel Enhancement Mode Power MOSFET with 30V VDS, 100A ID, and low RDS(ON) of 3.5mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in power switching applications.	NCE30H10BG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3007S NCEPOWER	1	NCE3007S is a -30V, -6.5A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 42mΩ at VGS=-10V and low gate charge, suitable for load switch and battery protection applications.	NCE3007S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H11G NCEPOWER	1	NCE30H11G N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, 2.4mΩ RDS(ON) at VGS=10V, and 3.0mΩ at VGS=4.5V, utilizing advanced trench technology for low on-resistance and high efficiency in power switching applications.	NCE30H11G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3065G NCEPOWER	1	NCE3065G is a channel enhancement mode power MOSFET with 30V drain-source voltage, 65A continuous drain current, and low on-resistance of 5.7mΩ typical at 10V gate-source voltage, housed in a DFN5x6-8L package.	NCE3065G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3009S NCEPOWER	1	NCE3009S is an N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 9A continuous drain current, and low on-resistance of 9mΩ at VGS=10V, suitable for power switching and high-frequency applications.	NCE3009S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H15BG NCEPOWER	1	30V, 150A NCE30H15BG channel enhancement mode power MOSFET with advanced trench technology, RDS(ON) less than 2.3mΩ at VGS=10V, low gate charge, suitable for DC/DC converters and high-frequency switching applications.	NCE30H15BG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H11BK NCEPOWER	1	NCE30H11BK is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 110A continuous drain current, and low on-resistance of 2.7mΩ at VGS=10V, using advanced trench technology for high efficiency in DC/DC converters and synchronous rectifiers.	NCE30H11BK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3085K NCEPOWER	1	NCE3085K is a Channel Enhancement Mode Power MOSFET with 30V VDS, 85A ID, 4.2mΩ RDS(ON) at VGS=10V, TO-252-2L package, using trench technology for low gate charge and excellent switching performance in power applications.	NCE3085K	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE30H10BK NCEPOWER	1	30V, 100A NCE30H10BK Power MOSFET with advanced trench technology, offering low RDS(ON) of 3.5mΩ at VGS=10V, high cell density for ultralow on-resistance, and optimized for power switching, hard switching, and high-frequency applications.	NCE30H10BK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3008XM NCEPOWER	1	NCE3008XM is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 8A continuous drain current, and low on-resistance of 33mΩ at 2.5V gate voltage, suitable for battery protection and switching applications in SOT-89-3L surface mount package.	NCE3008XM	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H29D NCEPOWER	1	NCE30H29D is an N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 290A continuous drain current, and ultra-low RDS(ON) of 1.4mΩ at VGS=10V, designed for high-frequency switching and power applications.	NCE30H29D	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30P28Q NCEPOWER	1	NCE30P28Q is a -30V, -28A channel enhancement mode power MOSFET with advanced trench technology, offering low on-resistance of 6.7mΩ at VGS=-10V and suitable for power management and load switch applications in a DFN3.3x3.3-8L surface mount package.	NCE30P28Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3008Y NCEPOWER	1	NCE3008Y is an N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 8A continuous drain current, and low on-resistance of 17mΩ at 10V gate-source voltage, housed in a SOT23-3L surface mount package.	NCE3008Y	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3080I NCEPOWER	1	NCE3080I N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 80A continuous drain current, RDS(ON) less than 6.5mΩ at VGS=10V, low gate charge, and high power switching capability in TO-251 package.	NCE3080I	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3055 NCEPOWER	1	NCE3055 N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, 100mΩ typical RDS(ON) at VGS=10V, and 120mΩ at VGS=4.5V, available in SOT-89-3L surface mount package.	NCE3055	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3030Q NCEPOWER	1	NCE3030Q is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 30A continuous drain current, and low on-resistance of 6.8mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications.	NCE3030Q	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE30H12AK NCEPOWER	1	NCE30H12AK is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 120A continuous drain current, and low on-resistance of 2.7mΩ at 10V gate-source voltage, utilizing advanced trench technology for high efficiency in power switching applications.	NCE30H12AK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE3080K NCEPOWER	1	NCE3080K is a Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 80A continuous drain current, and low on-state resistance of 4.5mΩ at 10V gate voltage, using advanced trench technology for high efficiency switching applications.	NCE3080K	3D model not available Symbol and footprint not available 0	0 Build or Request
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