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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	NCE60H10F NCEPOWER	1	NCE60H10F is an N-channel enhancement mode power MOSFET with 60V drain-source voltage, 100A continuous drain current, and low on-resistance of 5.7mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications.	NCE60H10F	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60ND45AG NCEPOWER	1	60V, 45A NCE60ND45AG trench MOSFET with 9.4mΩ RDS(ON) at VGS=10V, DFN5x6-8L package, designed for high-frequency switching, synchronous rectification, and DC/DC conversion applications.	NCE60ND45AG	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60NP4035K NCEPOWER	1	NCE60NP4035K is a complementary N-channel and P-channel power MOSFET with 60V VDS, 40A ID for N-channel and -35A ID for P-channel, featuring low RDS(ON) of 15.5mΩ and 35mΩ respectively, in a TO-252-4L package.	NCE60NP4035K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6005AN NCEPOWER	1	NCE6005AN is a 60V, 5A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 26 mΩ at VGS=10V and low gate charge, suitable for high-frequency switching applications.	NCE6005AN	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE60T2K2K NCEPOWER	1	NCE60T2K2I and NCE60T2K2K are N-channel super junction power MOSFETs with 600 V drain-source voltage, 2 A continuous drain current, 1.8 ohm typical RDS(on), and low gate charge, available in TO-251 and TO-252 packages.	NCE60T2K2K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60H30T NCEPOWER	1	NCE60H30T is a 60V, 300A trench power MOSFET with low RDS(ON) of 1.8mΩ at VGS=10V, designed for high-frequency switching applications, featuring high avalanche energy, low gate charge, and excellent thermal dissipation in TO-247 package.	NCE60H30T	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6080 NCEPOWER	1	NCE6080 is a channel enhancement mode power MOSFET with 60V drain-source voltage, 80A continuous drain current, and low on-resistance of 8.5mΩ at 10V gate-source voltage, suitable for PWM and load switching applications.	NCE6080	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60NP2016G NCEPOWER	1	NCE60NP2016G is a dual N- and P-channel trench MOSFET with 60 V drain-source voltage, 20 A continuous drain current, low RDS(ON) of 28 mΩ (N-channel) and 60 mΩ (P-channel), available in DFN5x6-8L package.	NCE60NP2016G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60ND03N NCEPOWER	1	NCE60ND03N is a channel enhancement mode power MOSFET with 60V drain-source voltage, 3A continuous drain current, and low on-resistance of 84mΩ at 10V VGS, suitable for battery protection and switching applications in SOT23-6L surface mount package.	NCE60ND03N	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60H15AD NCEPOWER	1	NCE60H15AD is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 150A continuous drain current, and ultralow RDS(ON) of 2.8mΩ at VGS=10V, designed for high-frequency switching and power supply applications.	NCE60H15AD	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6009AS NCEPOWER	1	NCE6009AS is an N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 9A continuous drain current, and low on-resistance of 11mΩ typical at 10V gate-source voltage, suitable for power switching and load switch applications.	NCE6009AS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6080EK NCEPOWER	1	NCE6080EK is a channel enhancement mode power MOSFET with 60V drain-source voltage, 80A continuous drain current, on-state resistance less than 6.9mΩ at 10V gate-source voltage, and advanced trench technology for low gate charge and high efficiency.	NCE6080EK	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60H18 NCEPOWER	1	NCE60H18 is a 60V, 180A power MOSFET with advanced trench technology, offering low RDS(ON) of 2.5mΩ at VGS=10V, suitable for switching applications, load control, and high-frequency circuits.	NCE60H18	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P25K NCEPOWER	1	P-Channel Enhancement Mode Power MOSFET NCE60P25K with -60V drain-source voltage, -25A continuous drain current, and 37mΩ typical RDS(ON) at VGS=-10V, utilizing trench technology for low gate charge and high current load capability.	NCE60P25K	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6080A NCEPOWER	1	NCE6080A is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 80A continuous drain current, and low on-resistance of 6.5mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance in TO-220-3L package.	NCE6080A	3D model not available Symbol and footprint not available 0	0 Build or Request

	NCE6045G NCEPOWER	1	NCE6045G is an N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 45A continuous drain current, and low RDS(ON) of 10mΩ typical at VGS=10V, utilizing advanced trench technology for high efficiency and low gate charge.	NCE6045G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P04Y NCEPOWER	1	NCE60P04Y is a -60V, -4A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 120 mΩ at VGS=-10V and low gate charge, suitable for load switch and PWM applications.	NCE60P04Y	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6009XS NCEPOWER	1	NCE6009XS is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 9A continuous drain current, and low on-resistance of 9.3mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in power switching applications.	NCE6009XS	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60H28LL NCEPOWER	1	NCE60H28LL is a TO-LL packaged N-channel enhancement mode power MOSFET with 60V drain-source voltage, 280A continuous drain current, and ultra-low on-resistance of 1.9mΩ typical at VGS=10V, suitable for high-frequency switching applications.	NCE60H28LL	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P18AQ NCEPOWER	1	NCE60P18AQ is a -60V, -18A channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 37mΩ at VGS=-10V and 55mΩ at VGS=-4.5V, suitable for power management and load switch applications in a DFN3.3x3.3-8L surface mount package.	NCE60P18AQ	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6003 NCEPOWER	1	NCE6003 is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 3A continuous drain current, RDS(ON) less than 105mΩ at VGS=10V, and low gate charge, suitable for battery protection and switching applications.	NCE6003	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60H10D NCEPOWER	1	60V, 100A NCE60H10D power MOSFET with advanced trench technology, offering low RDS(ON) of 4.5mΩ at VGS=10V, low gate charge, high current capability, and suitability for switching applications in power converters and load controls.	NCE60H10D	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60P70D NCEPOWER	1	NCE60P70D is a -60V, -70A trench technology power MOSFET with low RDS(ON) of 15mΩ at VGS=-10V, designed for high-density switching applications, offering low gate charge and excellent thermal performance in TO-263-2L package.	NCE60P70D	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE60ND08S NCEPOWER	1	NCE60ND08S is an N-Channel Enhancement Mode Power MOSFET with 60V VDS, 8A ID, and RDS(ON) less than 20mΩ at VGS=10V, featuring low gate charge and high-density cell design for efficient power switching applications.	NCE60ND08S	3D model not available Symbol and footprint not available 0	0 Build or Request
	NCE6058 NCEPOWER	1	NCE6058 N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 58A continuous drain current, and 13mΩ typical RDS(ON) at 10V VGS, utilizing trench technology for low gate charge and high efficiency in power switching applications.	NCE6058	3D model not available Symbol and footprint not available 0	0 Build or Request
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