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S10B-ZR (LF)(SN)
JST (JAPAN SOLDERLESS TERMINALS)
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1 | JST ZH Series, 1.5mm Pitch 10 Way 1 Row Right Angle PCB Header, Solder Termination, 1A | Header, Shrouded - Right Angle PTH Box | S10B-ZR (LF)(SN) |
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S10B-J21DK-GGXR (LF)(AU)
JST (JAPAN SOLDERLESS TERMINALS)
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1 | JFA J2000,Header Side entry type, 10 way, PK of 6 | Other | S10B-J21DK-GGXR (LF)(AU) |
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S10B-PHDSS (LF)(SN)
JST (JAPAN SOLDERLESS TERMINALS)
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1 | Connector Header Through Hole, Right Angle 10 position 0.079" (2.00mm) | Other | S10B-PHDSS (LF)(SN) |
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ST1S10BPHR
STMicroelectronics
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1 | IC REG BUCK ADJUSTABLE 3A 8SOPWR | Small Outline Packages | ST1S10BPHR |
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PHS-10B
CLIFF ELECTRONIC COMPONENTS
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1 | RCA PhonoConnectors PCB Mounting dual RCA Phono connector.Several different coloured inserts available.Nickel Silver or Gold plated finish | Other | PHS-10B |
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VS-10BQ040HM3/5BT
Vishay
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1 | Schottky Diodes & Rectifiers Schottky - SMB-e3 | Other | VS-10BQ040HM3/5BT |
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VS-10BQ100-M3/5BT
Vishay
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1 | VS-10BQ100-M3/5BT Vishay VS-10BQ100-M3/5BT, SMT Schottky Diode, 100V 1A, 2-Pin DO-214AA | Diodes Moulded | VS-10BQ100-M3/5BT |
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70V658S10BC8
Renesas Electronics
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1 | The 70V658 is a high-speed 64K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each por | BGA | 70V658S10BC8 |
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70V631S10BC8
Renesas Electronics
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1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V631S10BC8 |
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8430S10BYI-03LF
Renesas Electronics
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1 | The 8430S10I-03 is a PLL-based clock generator specifically designed for Cavium Networks SoC processors. This high performance device is optimized to generate the processor core reference clock, the DDR reference clocks, the PCI/PCI-X bus clocks, and the clocks for both the Gigabit Ethernet MAC and PHY. The clock generator offers low-jitter, low-skew clock outputs, and edge rates that easily meet the input requirements for the CN30XX/CN31XX/CN38XX/CN58XX processors. The output frequencies are generated from | Quad Flat Packages | 8430S10BYI-03LF |
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70T651S10BFI8
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BFI8 |
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8430S10BYI-02LFT
Renesas Electronics
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1 | The 8430S10I-02 is a PLL-based clock generator specifically designed for Cavium Networks SoC processors. This high performance device is optimized to generate the processor core reference clock, the DDR reference clocks, the PCI/PCI-X bus clocks, and the clocks for both the Gigabit Ethernet MAC and PHY. The clock generator offers ultra low-jitter, low-skew clock outputs, and edge rates that easily meet the input requirements for the CN30XX/CN31XX/CN38XX/CN58XX processors. The output frequencies are generate | Quad Flat Packages | 8430S10BYI-02LFT |
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70V639S10BF
Renesas Electronics
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1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S10BF |
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70T651S10BC
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BC |
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70T633S10BFI8
Renesas Electronics
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1 | The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T633S10BFI8 |
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70V658S10BF8
Renesas Electronics
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1 | The 70V658 is a high-speed 64K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each por | BGA | 70V658S10BF8 |
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70T651S10BF8
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BF8 |
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VS-10BQ100TRPBF
Vishay
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1 | VISHAY - VS-10BQ100TRPBF - DIODE, SCHOTTKY, 1A, 100V, SMB | Diodes Moulded | VS-10BQ100TRPBF |
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70T633S10BF8
Renesas Electronics
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1 | The 70T633 is a high-speed 512K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T633S10BF8 |
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70T651S10BCI8
Renesas Electronics
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1 | The 70T651 is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T651S10BCI8 |
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70T659S10BC
Renesas Electronics
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1 | The 70T659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T659S10BC |
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70V639S10BC
Renesas Electronics
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1 | The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V639S10BC |
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70V631S10BF8
Renesas Electronics
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1 | The 70V631 is a high-speed 256K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each po | BGA | 70V631S10BF8 |
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70T659S10BFI8
Renesas Electronics
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1 | The 70T659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system which would result in full-speed, error-free operation without the need for additional discrete logic. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T659S10BFI8 |
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70T653MS10BC8
Renesas Electronics
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1 | The 70T653M is a high-speed 256K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone 18874K-bit Dual-Port RAM. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. | BGA | 70T653MS10BC8 |
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