SA200 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NX3225SA-20.000000MHZ-B2 NDK	1	Crystals	Other	NX3225SA-20.000000MHZ-B2	3D model available Symbol and footprint available 3	1 Download Model
	ACASA2002U2002P1AT Vishay	1	Resistor Networks & Arrays 20K/20Kohm .1%/.05% 10/5ppm 0612 Auto	Other	ACASA2002U2002P1AT	3D model available Symbol and footprint available 3	1 Download Model
	DSA-2001R0L Panasonic	1	DSA2001R0L, PNP Bipolar Transistor, -100 mA -50 V HFE:210 150 MHz, 3-Pin Mini3 G3 B	SOT23 (3-Pin)	DSA-2001R0L	3D model available Symbol and footprint available 3	1 Download Model
	DSA200100L Panasonic	1	DSA200100L, PNP Bipolar Transistor, -100 mA -50 V HFE:210 150 MHz, 3-Pin Mini3 G3 B	SOT23 (3-Pin)	DSA200100L	3D model available Symbol and footprint available 3	1 Download Model

	ASA-20.000MHZ-L-T ABRACON	1	XTAL OSC XO 20.0000MHZ HCMOS SMD	Other	ASA-20.000MHZ-L-T	3D model available Symbol and footprint available 3	1 Download Model
	SIT9045AM-23-33S-A20.000000 SiTime	1	AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator	Other	SIT9045AM-23-33S-A20.000000	3D model available Symbol and footprint available 3	1 Download Model
	SIT8944BIT73-18SA2.000000 SiTime	1	1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator	Other	SIT8944BIT73-18SA2.000000	3D model available Symbol and footprint available 3	1 Download Model
	SF-1206SA2000R-2 Bourns	1	1206 slow-blow met-foil. 20A Auto	Other	SF-1206SA2000R-2	3D model not available Symbol and footprint available 2	1 Download Model
	71V3558SA200BQG Renesas Electronics	1	The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.	BGA	71V3558SA200BQG	3D model available Symbol and footprint available 3	1 Download Model
	71V35761SA200BGG8 Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761SA200BGG8	3D model available Symbol and footprint available 3	1 Download Model
	71V3558SA200BQGI Renesas Electronics	1	The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.	BGA	71V3558SA200BQGI	3D model available Symbol and footprint available 3	1 Download Model
	SF-0603SA200M-2 Bourns	1	Automotive Grade Slow Blow SMD Fuses	Fuses Chip	SF-0603SA200M-2	3D model available Symbol and footprint available 3	1 Download Model
	71V35761SA200BG Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761SA200BG	3D model available Symbol and footprint available 3	1 Download Model
	SIT8944BE-11-18SA2.000000 SiTime	1	1 – 110 MHz, -55 to 125°C, Endura™ Series Oscillator	Other	SIT8944BE-11-18SA2.000000	3D model available Symbol and footprint available 3	1 Download Model
	71V3558SA200BQG8 Renesas Electronics	1	The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.	BGA	71V3558SA200BQG8	3D model available Symbol and footprint available 3	1 Download Model

	71V35761SA200BGGI8 Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761SA200BGGI8	3D model available Symbol and footprint available 3	1 Download Model
	71V35761SA200BGGI Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761SA200BGGI	3D model available Symbol and footprint available 3	1 Download Model
	DSA2002R0L Panasonic	1	DSA2002R0L, PNP Bipolar Transistor, -500 mA -50 V HFE:120 130 MHz, 3-Pin Mini3 G3 B B	SOT23 (3-Pin)	DSA2002R0L	3D model available Symbol and footprint available 3	1 Download Model
	DSA2001R0L Panasonic	1	DSA2001R0L, PNP Bipolar Transistor, -100 mA -50 V HFE:210 150 MHz, 3-Pin Mini3 G3 B	SOT23 (3-Pin)	DSA2001R0L	3D model available Symbol and footprint available 3	1 Download Model
	ACASA2002E2002P1AT Vishay	1	Precision Thin Film Chip Resistor Array Superior Moisture Resistivity	Other	ACASA2002E2002P1AT	3D model available Symbol and footprint available 3	1 Download Model
	71V35761SA200BQG8 Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761SA200BQG8	3D model available Symbol and footprint available 3	1 Download Model
	DSA2001S0L Panasonic	1	DSA2001S0L, PNP Bipolar Transistor, -100 mA -50 V HFE:290 150 MHz, 3-Pin Mini3 G3 B	SOT23 (3-Pin)	DSA2001S0L	3D model available Symbol and footprint available 3	1 Download Model
	SIT9045AI-23-33S-A20.000000 SiTime	1	AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator	Other	SIT9045AI-23-33S-A20.000000	3D model available Symbol and footprint available 3	1 Download Model
	SIT9025AI-11-33SA20.000000 SiTime	1	AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator	Other	SIT9025AI-11-33SA20.000000	3D model available Symbol and footprint available 3	1 Download Model
	71V35761SA200BGI8 Renesas Electronics	1	The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.	BGA	71V35761SA200BGI8	3D model available Symbol and footprint available 3	1 Download Model
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