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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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ISPLSI8840-90LB352 Lattice Semiconductor Corporation
1 EE PLD, 16ns, CMOS, PBGA352 ISPLSI8840-90LB352 0 Build or Request
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ISPLSI8840V-60LB272 Lattice Semiconductor Corporation
1 EE PLD, 24ns, 840-Cell, CMOS, PBGA272 ISPLSI8840V-60LB272 0 Build or Request
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ISPLSI8840V-90LB272 Lattice Semiconductor Corporation
1 EE PLD, 16ns, 840-Cell, CMOS, PBGA272 ISPLSI8840V-90LB272 0 Build or Request
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ISPLSI8840V-90LB272 Rochester Electronics LLC
1 EE PLD, 16ns, PBGA272, THERMALLY ENHANCED, BGA-272 ISPLSI8840V-90LB272 0 Build or Request
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SI8800EDB-T2-E1 Vishay Siliconix
1 Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SI8800EDB-T2-E1 0 Build or Request
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947BSI8.87K0.25%100 Vishay Intertechnologies
1 Fixed Resistor, Wire Wound, 10W, 8870ohm, 750V, 0.25% +/-Tol, -100,100ppm/Cel, 947BSI8.87K0.25%100 0 Build or Request
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SI8809EDB-T2-E1 Vishay Siliconix
1 Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET SI8809EDB-T2-E1 0 Build or Request
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ISPLSI8840-110LB Lattice Semiconductor Corporation
1 EE PLD, 8.5ns, CMOS, PBGA432 ISPLSI8840-110LB 0 Build or Request
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932BSI8.871%100 Vishay Intertechnologies
1 Fixed Resistor, Wire Wound, 8W, 8.87ohm, 500V, 1% +/-Tol, 100ppm/Cel, Through Hole Mount 932BSI8.871%100 0 Build or Request
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ISPLSI8840-110LB432 Lattice Semiconductor Corporation
1 EE PLD, 13.5ns, 840-Cell, CMOS, PBGA432 ISPLSI8840-110LB432 0 Build or Request
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63BSI8870.5%100 Vishay Intertechnologies
1 Fixed Resistor, Wire Wound, 2W, 887ohm, 100V, 0.5% +/-Tol, -100,100ppm/Cel, 63BSI8870.5%100 0 Build or Request
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68BSI8.87K0.25%100 Vishay Intertechnologies
1 Fixed Resistor, Wire Wound, 3W, 8870ohm, 200V, 0.25% +/-Tol, 100ppm/Cel, Through Hole Mount 68BSI8.87K0.25%100 0 Build or Request
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ISPLSI8840V-60LB492 Rochester Electronics LLC
1 EE PLD, 24 ns, PBGA492, BGA-492 ISPLSI8840V-60LB492 0 Build or Request
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ISPLSI8840-60LB352 Lattice Semiconductor Corporation
1 EE PLD, 24ns, CMOS, PBGA352 ISPLSI8840-60LB352 0 Build or Request
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58BSI8870.25%100 Vishay Intertechnologies
1 Fixed Resistor, Wire Wound, 1W, 887ohm, 50V, 0.25% +/-Tol, 100ppm/Cel, Through Hole Mount 58BSI8870.25%100 0 Build or Request
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SI8809EDB-T2-E1 Vishay Intertechnologies
1 Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET SI8809EDB-T2-E1 0 Build or Request
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SESI88K21WR Dearborn Electronics Inc
1 GENERAL PURPOSE INDUCTOR SESI88K21WR 0 Build or Request
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ISPLSI8840V-125LB272 Rochester Electronics LLC
1 EE PLD, 13.5 ns, PBGA272, THERMALLY ENHANCED, BGA-272 ISPLSI8840V-125LB272 0 Build or Request
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SI8802DB-T2-E1 Vishay Siliconix
1 Small Signal Field-Effect Transistor, 3.5A I(D), 8V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SI8802DB-T2-E1 0 Build or Request
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ISPLSI8840-60LB432 Lattice Semiconductor Corporation
1 EE PLD, 24ns, 840-Cell, CMOS, PBGA432 ISPLSI8840-60LB432 0 Build or Request
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SI8810EDB-T2-E1 Vishay Intertechnologies
1 Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 1-Element, N-Channel, Silicon, Trench Mosfet FET SI8810EDB-T2-E1 0 Build or Request
Part Image Part Image 1 MOSFET -30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8 SI8821EDB-T2-E1 1 Download Model
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SI8806DB-T2-E1 Vishay Intertechnologies
1 Small Signal Field-Effect Transistor SI8806DB-T2-E1 0 Build or Request
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68BSI8.870.5%100 Vishay Intertechnologies
1 Fixed Resistor, Wire Wound, 3W, 8.87ohm, 200V, 0.5% +/-Tol, -100,100ppm/Cel, 68BSI8.870.5%100 0 Build or Request
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ISPLSI8840V-125LB272 Lattice Semiconductor Corporation
1 EE PLD, 13.5ns, 840-Cell, CMOS, PBGA272 ISPLSI8840V-125LB272 0 Build or Request
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