SQ231 Model Download Search Results
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SQ2319ADS
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 4.6A I(D), 40V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | SQ2319ADS |
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SQ2318AES-T1-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 8A I(D), 40V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | SQ2318AES-T1-GE3 |
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SQ2315CES-T1_BE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 5A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, TO-236 | SQ2315CES-T1_BE3 |
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E2S-Q231M
OMRON Electronic Components
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1 | Inductive Sensor, 0mm Min, 2.875mm Max, Rectangular | E2S-Q231M |
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