SiHB2 Model Download Search Results
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SIHB22N60AE-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 20A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | SIHB22N60AE-GE3 |
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SIHB24N65EF-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 24A I(D), 650V, 0.156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | SIHB24N65EF-GE3 |
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SIHB22N60S-E3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | SIHB22N60S-E3 |
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SIHB22N60EL-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | SIHB22N60EL-GE3 |
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SIHB20N50E-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | SIHB20N50E-GE3 |
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SIHB24N65ET5-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | SIHB24N65ET5-GE3 |
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SIHB22N65E-T1-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | SIHB22N65E-T1-GE3 |
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SIHB23N60E-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 23A I(D), 600V, 0.158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | SIHB23N60E-GE3 |
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