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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	WMSC040F12B1P WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor	WMSC040F12B1P	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC008H12B2S6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor	WMSC008H12B2S6T	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC010H12B1L6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor	WMSC010H12B1L6T	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC040H12B1P WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 45A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC040H12B1P	3D model not available Symbol and footprint not available 0	0 Build or Request

	WMSC020F12B1P WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 57A I(D), 1200V, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC020F12B1P	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC011F12B2P WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor	WMSC011F12B2P	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC020F12B1P6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor	WMSC020F12B1P6T	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC010H12B1P WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 107A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC010H12B1P	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC006H12B2P WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 200A I(D), 1200V, 0.01ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC006H12B2P	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC004H12B2P WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 227A I(D), 1200V, 0.006ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC004H12B2P	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC060S12B1P6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor	WMSC060S12B1P6T	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC020H12B1P WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 70A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC020H12B1P	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC040B12B1P-D WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor	WMSC040B12B1P-D	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC004H12B2S-D6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor	WMSC004H12B2S-D6T	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC004H12B2S-D WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor	WMSC004H12B2S-D	3D model not available Symbol and footprint not available 0	0 Build or Request

	WMSC008H12B2P6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 157A I(D), 1200V, 0.013ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC008H12B2P6T	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC020F12B1P-B6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 57A I(D), 1200V, 0.029ohm, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC020F12B1P-B6T	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC020B12B1P-B6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor	WMSC020B12B1P-B6T	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC030H12B1P6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 53A I(D), 1200V, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC030H12B1P6T	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC040S12B1S-C WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 37A I(D), 1200V, 0.045ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC040S12B1S-C	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC011F12B2S6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 104A I(D), 1200V, 0.014ohm, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC011F12B2S6T	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC010H12B1L WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor	WMSC010H12B1L	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC004H12B2P6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 227A I(D), 1200V, 0.006ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC004H12B2P6T	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC006H12B2P6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor, 200A I(D), 1200V, 0.01ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET	WMSC006H12B2P6T	3D model not available Symbol and footprint not available 0	0 Build or Request
	WMSC005H12B2P-D6T WeEn Semiconductor Co Ltd	1	Power Field-Effect Transistor	WMSC005H12B2P-D6T	3D model not available Symbol and footprint not available 0	0 Build or Request
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