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X28HC256PZ-12 Renesas Electronics
1 The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection Dual-In-Line Packages X28HC256PZ-12 1 Download Model
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X28HC64JIZ-90T1 Renesas Electronics
1 The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT Plastic Leaded Chip Carrier X28HC64JIZ-90T1 1 Download Model
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X28HC256JIZ-90T1 Renesas Electronics
1 The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection Plastic Leaded Chip Carrier X28HC256JIZ-90T1 1 Download Model
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X28HC256JIZ-15T1 Renesas Electronics
1 The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection Plastic Leaded Chip Carrier X28HC256JIZ-15T1 1 Download Model
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X28HC256JZ-12T1 Renesas Electronics
1 The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection Plastic Leaded Chip Carrier X28HC256JZ-12T1 1 Download Model
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X28HC256JZ-12 Renesas Electronics
1 The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection Plastic Leaded Chip Carrier X28HC256JZ-12 1 Download Model
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X28HC256JIZ-15 Renesas Electronics
1 The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection Plastic Leaded Chip Carrier X28HC256JIZ-15 1 Download Model
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X28HC64J-90C7871 Renesas Electronics
1 64k, 8k x 8-Bit 5 Volt, Byte Alterable EEPROM 64k, 32 Ld PLCC Plastic Leaded Chip Carrier X28HC64J-90C7871 1 Download Model
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X28HC64PIZ-12 Renesas Electronics
1 The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT Dual-In-Line Packages X28HC64PIZ-12 1 Download Model
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X28HC64PZ-12 Renesas Electronics
1 The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT Dual-In-Line Packages X28HC64PZ-12 1 Download Model
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X28HC64SIZ-12 Renesas Electronics
1 The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT Small Outline Packages X28HC64SIZ-12 1 Download Model
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X28HC256PIZ-12 Renesas Electronics
1 The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection Dual-In-Line Packages X28HC256PIZ-12 1 Download Model
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X28HC256JZ-15 Renesas Electronics
1 The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection Plastic Leaded Chip Carrier X28HC256JZ-15 1 Download Model
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X28HC64JIZ-12 Renesas Electronics
1 The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT Plastic Leaded Chip Carrier X28HC64JIZ-12 1 Download Model
Part Image Part Image
X28HC256PIZ-15 Renesas Electronics
1 The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection Dual-In-Line Packages X28HC256PIZ-15 1 Download Model
Part Image Part Image
X28HC64SIZ-12T1 Renesas Electronics
1 The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT Small Outline Packages X28HC64SIZ-12T1 1 Download Model
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X28HC64SZ-12 Renesas Electronics
1 The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT Small Outline Packages X28HC64SZ-12 1 Download Model
Part Image Part Image
X28HC256JIZ-12T1 Renesas Electronics
1 The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection Plastic Leaded Chip Carrier X28HC256JIZ-12T1 1 Download Model
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X28HC256DM-12/B Rochester Electronics LLC
1 X28HC256 - EEPROM, 32KX8, 5V, Parallel X28HC256DM-12/B 0 Build or Request
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X28HC256K-15 Intersil Corporation
1 EEPROM, 32KX8, 150ns, Parallel, CMOS, CPGA28 X28HC256K-15 0 Build or Request
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X28HC256SM-70 Xicor Inc
1 EEPROM, 32KX8, 70ns, Parallel, CMOS, PDSO28 X28HC256SM-70 0 Build or Request
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X28HC64DMB-90 Xicor Inc
1 EEPROM, 8KX8, 90ns, Parallel, CMOS, CDIP28 X28HC64DMB-90 0 Build or Request
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X28HC256TI-70 Xicor Inc
1 EEPROM, 32KX8, 70ns, Parallel, CMOS, PDSO32 X28HC256TI-70 0 Build or Request
Part Image Part Image 1 EEPROM, 32KX8, 120ns, Parallel, CMOS, CPGA28 X28HC256KMB-12 0 Build or Request
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X28HC64KI-90 Xicor Inc
1 EEPROM, 8KX8, 90ns, Parallel, CMOS, CPGA28 X28HC64KI-90 0 Build or Request
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