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RMQS2A1836DGBA-332#AC0
Renesas Electronics
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1 | The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQS2A1836DGBA-332#AC0 |
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R1Q4A7236ABB-33IB1
Renesas Electronics
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1 | The R1Q4A7236 is a 2, 097, 152-word by 36-bit and the R1Q4A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low | BGA | R1Q4A7236ABB-33IB1 |
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NTC0805J20K
TE Connectivity
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1 | Dimensions: Product Width 1.25 MM | Product Length 2 MM | Product Height .5 MM | Product Height .019 INCH | Product Width .049 INCH | Product Length .078 INCH | Electrical Characteristics: Passive Component Tolerance 5 PCT | Resistance Value 20K OHM | Operation/Application: Mode of Operation Negative Temperature Coefficient | Other: Beta Value 4100 K | Packaging Features: Packaging Method Taped & Reeled | Product Type Features: Package Size Code 0805 | | Thermistors Chip | NTC0805J20K |
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SPA06B
C & K COMPONENTS
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1 | C & K COMPONENTS - SPA06B - DIP / SIP Switch, 6 Circuits, Slide, Through Hole, SPST, 20 V, 10 mA | Other | SPA06B |
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R1Q2A7236ABB-40IB1
Renesas Electronics
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1 | The R1Q2A7236 is a 2, 097, 152-word by 36-bit, the R1Q2A7218 is a 4, 194, 304-word by 18-bit, and the R1Q2A7209 is a 8, 388, 608-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which r | BGA | R1Q2A7236ABB-40IB1 |
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M93C46-RDW3TP/K
STMicroelectronics
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1 | • Industry standard MICROWIRE™ bus\r\n• Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb\r\n• Dual organization: by word (x16) or byte (x8)\r\n• Write\r\n– Byte within 4 ms\r\n– Word within 4 ms\r\n• READY/BUSY signal during programming\r\n• 2 MHz clock rate\r\n• Sequential read operation\r\n• Single supply voltage: 1.8 V to 5.5 V\r\n• Operating temperature range: -40 °C up to\r\n125 °C\r\n• Enhanced ESD protection\r\n• Write cycle endurance\r\n– 4 million Write cycles at 25 °C\r\n– 1.2 million Write cycles at 85 °C\r\n– 600 k Write cycles a | Small Outline Packages | M93C46-RDW3TP/K |
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R1QAA4436RBG-18IB0
Renesas Electronics
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1 | The R1QAA4436RBG is a 4, 194, 304-word by 36-bit and the R1QAA4418RBG is a 8, 388, 608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, | BGA | R1QAA4436RBG-18IB0 |
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R1QEA4418RBG-19IB0
Renesas Electronics
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1 | The R1QEA4436RBG is a 4, 194, 304-word by 36-bit and the R1QEA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Spee | BGA | R1QEA4418RBG-19IB0 |
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RMQS2A3618DGBA-332#AC0
Renesas Electronics
|
1 | The RMQS2A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS2A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp | BGA | RMQS2A3618DGBA-332#AC0 |
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R1QEA4418RBG-18IB0
Renesas Electronics
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1 | The R1QEA4436RBG is a 4, 194, 304-word by 36-bit and the R1QEA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Spee | BGA | R1QEA4418RBG-18IB0 |
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R1QBA4418RBG-19IB0
Renesas Electronics
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1 | The R1QBA4436RBG is a 4, 194, 304-word by 36-bit and the R1QBA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Spee | BGA | R1QBA4418RBG-19IB0 |
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NTC0805J3K3
TE Connectivity
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1 | Dimensions: Product Height .5 MM | Product Height .019 INCH | Product Width .049 INCH | Product Width 1.25 MM | Product Length .078 INCH | Product Length 2 MM | Electrical Characteristics: Resistance Value 3.3K OHM | Passive Component Tolerance 5 PCT | Operation/Application: Mode of Operation Negative Temperature Coefficient | Other: Beta Value 3450 K | Packaging Features: Packaging Method Taped & Reeled | Product Type Features: Package Size Code 0805 | | Thermistors Chip | NTC0805J3K3 |
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NTC0805J1K0
TE Connectivity
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1 | Dimensions: Product Width 1.25 MM | Product Length .078 INCH | Product Height .5 MM | Product Height .019 INCH | Product Length 2 MM | Product Width .049 INCH | Electrical Characteristics: Resistance Value 1K OHM | Passive Component Tolerance 5 PCT | Operation/Application: Mode of Operation Negative Temperature Coefficient | Other: Beta Value 2750 K | Packaging Features: Packaging Method Taped & Reeled | Product Type Features: Package Size Code 0805 | | Thermistors Chip | NTC0805J1K0 |
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RMQS3A1818DGBA-302#AC0
Renesas Electronics
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1 | The RMQS3A1836DGBA is a 524, 288-word by 36-bit and the RMQS3A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQS3A1818DGBA-302#AC0 |
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R1Q2A7218ABB-40IB1
Renesas Electronics
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1 | The R1Q2A7236 is a 2, 097, 152-word by 36-bit, the R1Q2A7218 is a 4, 194, 304-word by 18-bit, and the R1Q2A7209 is a 8, 388, 608-word by 9-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which r | BGA | R1Q2A7218ABB-40IB1 |
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SETL BK GN AU OA
C & K COMPONENTS
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0 | SPDT Keyboard Switch, 10 mA, -25 → +85°C | Other | SETL BK GN AU OA |
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D6C50F1LFS
C & K COMPONENTS
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1 | Pushbutton Switches Key Switch N.O. SPDT 100 mA | Other | D6C50F1LFS |
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PTS526 SK08 SMTR2 LFS
C & K COMPONENTS
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1 | Tactile Switches 50mA 12VDC, 5.2x5.2mm, 0.8mm H, 260gf, G leads, No ground pin, no actuator | Other | PTS526 SK08 SMTR2 LFS |
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RM100002BCB
C & K COMPONENTS
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1 | Rotary Switches .2A 48VDC 8pos Flush No Stop 270+gf | Other | RM100002BCB |
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PTS125SM122LFS
C & K COMPONENTS
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1 | Tactile Switches Switch Tact 12Mm Spst Pcb | Other | PTS125SM122LFS |
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KSC241J-LFS
C & K COMPONENTS
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1 | Sealed Tact Switch for SMT | Other | KSC241J-LFS |
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CCM03-3013LFTR102
C & K COMPONENTS
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0 | Conn SIM/SAM M 6 POS 2.54mm Solder RA SMD T/R 1A | Other | CCM03-3013LFTR102 |
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KSC1001J LFS
C & K COMPONENTS
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1 | Microswitch TACT; SPST-NO; Positions:2; 0.05A/32VDC; SMT; none | Other | KSC1001J LFS |
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PTS645VL832LFS
C & K COMPONENTS
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1 | Tactile Switches SWITCH TACTILE | Other | PTS645VL832LFS |
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SS14D01VG3
C & K COMPONENTS
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1 | SWITCH SLIDE | Other | SS14D01VG3 |
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