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Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ERBRE3R00V
Panasonic
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1 | Micro Chip Fuse, Size [L×W] (EIA) (mm): 1.6×0.8 (EIA:0603), Rated Current (A): 3, Internal R [at 25℃ max.] (mΩ): 33, Rated Voltage (Open Circuit Voltage) [DC] (V): 32, Interrupting Rating (A): 50, Category Temp. Range (°C): -40 to +125 | Other | ERBRE3R00V |
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ERBRD3R00X
Panasonic
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1 | Micro Chip Fuse, Size [L×W] (EIA) (mm): 1.0×0.5 (EIA:0402), Rated Current (A): 3, Internal R [at 25℃ max.] (mΩ): 37, Rated Voltage (Open Circuit Voltage) [DC] (V): 32, Interrupting Rating (A): 35, Category Temp. Range (°C): -40 to +125 | Other | ERBRD3R00X |
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ERB-RG1R50V
Panasonic
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1 | Micro Chip Fuse, Size [L×W] (EIA) (mm): 3.2×1.6 (EIA:1206), Rated Current (A): 1.5, Internal R [at 25℃ max.] (mΩ): 115, Rated Voltage (Open Circuit Voltage) [DC] (V): 63, Interrupting Rating (A): 50, Category Temp. Range (°C): -40 to +125 | Other | ERB-RG1R50V |
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ERBRD1R00X
Panasonic
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1 | Micro Chip Fuse, Size [L×W] (EIA) (mm): 1.0×0.5 (EIA:0402), Rated Current (A): 1, Internal R [at 25℃ max.] (mΩ): 125, Rated Voltage (Open Circuit Voltage) [DC] (V): 32, Interrupting Rating (A): 35, Category Temp. Range (°C): -40 to +125 | Other | ERBRD1R00X |
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ERB-RG3R00V
Panasonic
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1 | Micro Chip Fuse, Size [L×W] (EIA) (mm): 3.2×1.6 (EIA:1206), Rated Current (A): 3, Internal R [at 25℃ max.] (mΩ): 45, Rated Voltage (Open Circuit Voltage) [DC] (V): 32, Interrupting Rating (A): 50, Category Temp. Range (°C): -40 to +125 | Other | ERB-RG3R00V |
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ERBRD1R50X
Panasonic
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1 | Micro Chip Fuse, Size [L×W] (EIA) (mm): 1.0×0.5 (EIA:0402), Rated Current (A): 1.5, Internal R [at 25℃ max.] (mΩ): 70, Rated Voltage (Open Circuit Voltage) [DC] (V): 32, Interrupting Rating (A): 35, Category Temp. Range (°C): -40 to +125 | Other | ERBRD1R50X |
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550-2407F
Dialight
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1 | 550 Series CBI 5mm Sloped 1x1 Hi Eff R | Other | 550-2407F |
3
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09736966902
HARTING
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1 | DIN R male straight 96pin, w/ coding, 2.5mm tails, PL2 | Other | 09736966902 |
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MC1206S4F820JT5E
Multicomp Pro
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1 | RES, THICK FILM, 82R, 1%, 0.25W, 1206; R | Resistor Chip | MC1206S4F820JT5E |
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09792647801
HARTING
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1 | DIN R (HE11) female angled, 64pin, PL3 (row a loaded) | Other | 09792647801 |
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09794965801
HARTING
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1 | DIN R (HE11) female angled, 96pin, w/ board locks, PLS4 | Other | 09794965801 |
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09731966904
HARTING
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1 | DIN R male straight 96pin, press-in 5.0mm tails, PL2 | Other | 09731966904 |
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53259-0429
Molex
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1 | Headers & Wire Housings 3.5 WtB Wafer Assy R B Wafer Assy RA 4Ckt | Other | 53259-0429 |
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90136-2305
Molex
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1 | Headers & Wire Housings C-Grid Shrd Hdr SR R Hdr SR RA Au-F 5Ckt | Header, Shrouded - Right Angle PTH Box | 90136-2305 |
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TLP741
Toshiba
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1 | TLP741G TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor TLP741G Office Machine Household Use Equipment Solid State R | Dual-In-Line Packages | TLP741 |
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SS496B-T2
Honeywell
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1 | Board Mount Hall Effect / Magnetic Sensors Flat TO-92, 4.5Vdc R atiometric, PCB | Other | SS496B-T2 |
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70551-0004
Molex
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1 | Headers & Wire Housings SL R/A Latch Hdr /Sp r /Split Pg Tin 5Ckt | Other | 70551-0004 |
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70287-1120
Molex
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1 | Headers & Wire Housings CGrid Bkwy Hdr DR Rt R RtPn 15''SAu 48Ckt | Other | 70287-1120 |
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70V3319S133BCI8
Renesas Electronics
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1 | The 70V3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3319S133BCI8 |
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70T3399S133BCI
Renesas Electronics
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1 | The 70T3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3399 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3399S133BCI |
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70T3539MS166BCG
Renesas Electronics
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1 | The 70T3539M is a high-speed 512K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T353M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3539MS166BCG |
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70V3599S133BC
Renesas Electronics
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1 | The 70V3599 is a high-speed 128K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3599 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3599S133BC |
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70V3599S166BFG
Renesas Electronics
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1 | The 70V3599 is a high-speed 128K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3599 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3599S166BFG |
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70V3319S166BC
Renesas Electronics
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1 | The 70V3319 is a high-speed 256K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3319 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. | BGA | 70V3319S166BC |
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70T3519S166BC
Renesas Electronics
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1 | The 70T3519 is a high-speed 256K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3519 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. | BGA | 70T3519S166BC |
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