175-R Model Download Search Results
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UJ4SC075010L8S
onsemi
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1 | On-resistance RDS(on); Maximum operating temperature: 175 °C; Excellent Reverse Recover; Low Gate Charge | Other | UJ4SC075010L8S |
3
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MJPE44H11-QZ
Nexperia
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1 | 80 V, 8 A NPN high power bipolar transistor temperature-55 175 °C | Other | MJPE44H11-QZ |
3
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TH4D226M035C0500
Vishay
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1 | Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT(TM) Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade | Capacitor Moulded Polarised | TH4D226M035C0500 |
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DIP05-1C90-51E
STANDEXMEDER
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1 | Reed Relays Coil Voltage: 5 VDC Relay Contact Form: 1 Form C (SPDT-NO, NC) Maximum Switched Current: 500 mA Switching Voltage: 175 VAC, 175 VDC Maximum Switched Power: 20 W Coil Resistance: 200 Ohms | Other | DIP05-1C90-51E |
3
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GBU6A
onsemi
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1 | UL certified, UL #E258596; Glass-Passivated Junction; Ideal for Printed Circuit Bboard; Reliable Low-Cost Construction Utilizing Molded Plastic Technique; Surge Overload Rating: 175 A peak | Other | GBU6A |
3
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FFSH40120ADN-F085
onsemi
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1 | No Reverse Recovery / No Forward Recovery; Positive Temperature Coefficient; Avalanche Rated 210 mJ; Max Junction Temperature 175 °C; AEC-Q101 qualified and PPAP Capable | Transistor Outline, Vertical | FFSH40120ADN-F085 |
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FFSH4065ADN-F155
onsemi
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1 | Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery; Pb−Free, Halogen Free/BFR Free and RoHS Compliant | Transistor Outline, Vertical | FFSH4065ADN-F155 |
3
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FFSB0865B-F085
onsemi
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1 | Max Junction Temperature 175 oC; Avalanche Rated 33 mJ; High Surge Current Capacity; Positive Temperature Coefficient; Ease of Paralleling; No Reverse Recovery / No Forward Recovery; AEC-Q101 Qualified | Other | FFSB0865B-F085 |
2
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PMN120ENEAX
Nexperia
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1 | • Logic-level compatible• Extended temperature range Tj = 175 °C• Trench MOSFET technology• ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)• AEC-Q101 qualified | Small Outline Packages | PMN120ENEAX |
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FFSB0665B-F085
onsemi
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1 | Max Junction Temperature 175 oC; Avalanche Rated 24.5 mJ; High Surge Current Capacity; Positive Temperature Coefficient; Ease of Paralleling; No Reverse Recovery / No Forward Recovery; AEC-Q101 Qualified | Other | FFSB0665B-F085 |
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FFSH4065A
onsemi
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1 | Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery; Pb−Free, Halogen Free/BFR Free and RoHS Compliant | Transistor Outline, Vertical | FFSH4065A |
3
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uClamp1211Z
SEMTECH
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1 | Ultra Small μClamp® 1-Line ESD Protection PPK 175 W , IPP 7 A , VESD ±30 ±30 kV , TSTG -55 to +150 °C | Other | uClamp1211Z |
2
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BZD27C200P-E3-08
Vishay
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1 | VISHAY - BZD27C200P-E3-08 - Zener Single Diode, 200 V, 800 mW, DO-219AB, 5 %, 2 Pins, 175 °C | Small Outline Diode Flat Lead | BZD27C200P-E3-08 |
3
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SE30124
Vishay
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1 | Surface-Mount High Voltage Rectifiers, 30 A, 1200 V, 700 A, 10 μA, 20 mJ, 175 °C, DO-218AB | Other | SE30124 |
3
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TMP126DCKR
Texas Instruments
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1 | Board Mount Temperature Sensors +/-0.25 C SPI temperature sensor with 175 C operation, CRC and slew-rate alert | SOT23 (6-Pin) | TMP126DCKR |
3
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39-30-2041
Molex
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1 | Headers & Wire Housings Mini-Fit Jr Vert Hdr r Assy 4Ckt V-2 Gold | Other | 39-30-2041 |
3
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594D156X9050R8T
Vishay
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1 | Tantalum Capacitors - Solid SMD 15uF 50volts 10% R case Conformal | Other | 594D156X9050R8T |
2
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39372-0003
Molex
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1 | Pluggable Terminal Blocks SR HDR 7.5MM 3 ASY S R HDR 7.5MM 3 ASY ST | Other | 39372-0003 |
3
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PIC16F1459-E/ML
Microchip
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1 | 8-bit Microcontrollers - MCU 14KB Fl 1kB R 48MHz Int. Oc 18 I0 | Quad Flat No-Lead | PIC16F1459-E/ML |
3
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D121J33C0GH63L6R
Vishay
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1 | VISHAY - D121J33C0GH63L6R - CAPACITOR CERAMIC 120PF 100V, C0G, 5%, R | Other | D121J33C0GH63L6R |
3
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ADL7078ACPZN
Analog Devices
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1 | ► High RF input power survivability: 32 dBm► Integrated AC coupling capacitors and bias inductor► Single positive supply: 5 V with IDQ = 175 mA► RBIAS drain current adjustment pin► Gain: 13 dB typical from 2 GHz to 18 GHz► OIP3: 28 dBm typical from 2 GHz to 18 GHz► OIP2: 48 dBm typical from 2 GHz to 18 GHz | Quad Flat No-Lead | ADL7078ACPZN |
3
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P6KE12CA
STMicroelectronics
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1 | • Peak pulse power:– 600 W (10/1000 μs)– up to 4 kW (8/20 μs)• Stand-off voltage range from 5.8 V to 376 V• Unidirectional and bidirectional types• Operating Tj max: 175 °C• High power capability at Tj max.: up to 420 W (10/1000 µs)• Lead finishing: matte tin plating | Diodes, Axial Diameter Horizontal Mounting | P6KE12CA |
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FFSP2065A
onsemi
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1 | Max Junction Temperature 175 °C; High Surge Current Capacity; Positive Temperature Coefficient; No Reverse Recovery / No Forward Recovery | Transistor Outline, Vertical | FFSP2065A |
3
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PBDTC143ZTH-QR
Nexperia
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1 | 50 V, 100 mA low VCEsat NPN resistor-equipped transistor;R1 = 4.7 kΩ, R2 = 47 kΩ -65 175 °C | SOT23 (3-Pin) | PBDTC143ZTH-QR |
3
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MCU031N06Q-TP
MCC
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1 | MOSFET (N-Channel) Drain-Source Voltage VDS (V) 60 Pulsed Drain Current IDM(A) 92 Operating junction temperature –55 - 175 °C | Other | MCU031N06Q-TP |
3
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