CDST1 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	SI2312CDS-T1-GE3 VBsemi Electronics Co Ltd	1	N-Channel 20 V MOSFET in SOT-23 package with RDS(on) of 0.028 ohms at VGS = 4.5 V, continuous drain current of 6 A, and gate charge of 8.8 nC, suitable for DC/DC converters and load switches.		SI2312CDS-T1-GE3	3D model not available Symbol and footprint not available 0	0 Build or Request
	SI2303CDS-T1-E3 Vishay Intertechnologies	1	Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		SI2303CDS-T1-E3	3D model not available Symbol and footprint not available 0	0 Build or Request
	SI2305CDS-T1-GE3 VBsemi Electronics Co Ltd	1	P-Channel 20-V, 5-A, 35-mΩ MOSFET in SOT-23 package with 10 nC gate charge, suitable for load switches, PA switches, and DC/DC converters.		SI2305CDS-T1-GE3	3D model not available Symbol and footprint not available 0	0 Build or Request
	ACDST-16-G Comchip Technology Corporation Ltd	1	Rectifier Diode, 1 Phase, 1 Element, 0.15A, 75V V(RRM), Silicon		ACDST-16-G	3D model not available Symbol and footprint not available 0	0 Build or Request

	SI2307CDS-T1-E3 Vishay Siliconix	1	Power Field-Effect Transistor, 2.7A I(D), 30V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		SI2307CDS-T1-E3	3D model not available Symbol and footprint not available 0	0 Build or Request
	SI2307CDS-T1-BE3 Vishay Intertechnologies	1	Power Field-Effect Transistor, 2.7A I(D), 30V, 0.088ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		SI2307CDS-T1-BE3	3D model not available Symbol and footprint not available 0	0 Build or Request
	CDST-16-G Comchip Technology Corporation Ltd	1	Rectifier Diode, 1 Phase, 1 Element, 0.15A, 75V V(RRM)		CDST-16-G	3D model not available Symbol and footprint not available 0	0 Build or Request
	SI2333CDS-T1-GE3 Vishay Siliconix	1	Power Field-Effect Transistor, 7.1A I(D), 12V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		SI2333CDS-T1-GE3	3D model not available Symbol and footprint not available 0	0 Build or Request
	CDST-16-HF Comchip Technology Corporation Ltd	1	Rectifier Diode, 1 Phase, 1 Element, 0.15A, 75V V(RRM), Silicon		CDST-16-HF	3D model not available Symbol and footprint not available 0	0 Build or Request
	SI2309CDS-T1-GE3 VBsemi Electronics Co Ltd	1	P-Channel 60-V (D-S) MOSFET with -5.2 A continuous drain current, 0.04 ohm drain-source on-state resistance at VGS = -10 V, 12 nC gate charge, and 175 °C maximum operating temperature in a SOT-23 package.		SI2309CDS-T1-GE3	3D model not available Symbol and footprint not available 0	0 Build or Request
	SI2303CDS-T1-GE3 Vishay Siliconix	1	Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB		SI2303CDS-T1-GE3	3D model not available Symbol and footprint not available 0	0 Build or Request

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