DN10A Model Download Search Results
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JMTQ11DN10A
Jiangsu JieJie Microelectronics Co Ltd
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1 | 100V, 10A N-channel enhancement mode power MOSFET in a PDFN3x3-8L package with RDS(on) less than 120mΩ at VGS=10V, featuring advanced trench technology and low gate charge for efficient power management applications. | JMTQ11DN10A |
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PT1E-1250-DN-10-AB-TTL-M6
TE Connectivity
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1 | Wire Wound Potentiometric Sensor | PT1E-1250-DN-10-AB-TTL-M6 |
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JMTP11DN10A
Jiangsu JieJie Microelectronics Co Ltd
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1 | N-channel enhancement mode power MOSFET with 100V drain-source voltage, 3A continuous drain current, and low on-resistance of 115mΩ at VGS=10V in SOP-8 package. | JMTP11DN10A |
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PT5E-2500-S47-DN-10-AB-TTL-M6M
TE Connectivity
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1 | Wire Wound Potentiometric Sensor | PT5E-2500-S47-DN-10-AB-TTL-M6M |
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PT5E-150-V62-DN-10-ABC-UD-M6
TE Connectivity
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1 | Wire Wound Potentiometric Sensor | PT5E-150-V62-DN-10-ABC-UD-M6 |
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JMTY11DN10A
Jiangsu JieJie Microelectronics Co Ltd
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1 | N-channel enhancement mode power MOSFET in SOT-223 package, 100 V drain-source voltage, 5 A continuous drain current, RDS(on) less than 125 mΩ at VGS = 10 V, suitable for load switch, PWM, and power management applications. | JMTY11DN10A |
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JMTJ11DN10A
Jiangsu JieJie Microelectronics Co Ltd
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1 | 100V, 3A N-channel enhancement mode power MOSFET in SOT-23-3L package with RDS(on) less than 115 mΩ at VGS = 10V and low gate charge, suitable for load switch, PWM, and power management applications. | JMTJ11DN10A |
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RSSDN-10A..
Idec
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1 | SSR, DIN/PANEL MOUNT, 660VAC, 32VDC, 10A | RSSDN-10A.. |
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![Part Image](["https://componentsearchengine.com/2D/0/21488372.png",null,null])
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