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EPC20 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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LLEPC2016KKT1R0M TAIYO YUDEN
1 1.0uH±20%, 3.5A, 0806/2016 (EIA/JIS) INDUCTORS  [Wire-wound Metal Power Inductors MCOIL™ LLEP series for Medical Devices classified as GHTF Classes A or B (Japan Classes I or II)] Other LLEPC2016KKT1R0M 1 Download Model
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LLEPC2012KKTR47M TAIYO YUDEN
1 INDUCTORS [Wire-wound Metal Power Inductors MCOIL™ LLEP series ,0.47 uH ± 20 % ,4.2 A ,-40 to +125 ℃ . Other LLEPC2012KKTR47M 1 Download Model
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LLEPC2012HKTR47M TAIYO YUDEN
1 0.47uH±20%, 3.7A, 0805/2012 (EIA/JIS) INDUCTORS  [Wire-wound Metal Power Inductors MCOIL™ LLEP series for Medical Devices classified as GHTF Classes A or B (Japan Classes I or II)] Other LLEPC2012HKTR47M 1 Download Model
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EPC2031 Efficient Power Conversion
1 Power Field-Effect Transistor, 48A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET, DIE-24 EPC2031 0 Build or Request
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EPC2030 Efficient Power Conversion
1 Power Field-Effect Transistor, 48A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET, DIE-24 EPC2030 0 Build or Request
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EPC2039ENGR Efficient Power Conversion
1 Power Field-Effect Transistor, 6.8A I(D), 80V, 0.022ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-9 EPC2039ENGR 0 Build or Request
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EPC2045 Efficient Power Conversion
1 Power Field-Effect Transistor, 16A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-15 EPC2045 0 Build or Request
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EPC2007C Efficient Power Conversion
1 Power Field-Effect Transistor, 6A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-5 EPC2007C 0 Build or Request
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EPC2038ENGR Efficient Power Conversion
1 Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 0.90 X 0.90 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-4 EPC2038ENGR 0 Build or Request
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EPC2012C Efficient Power Conversion
1 Power Field-Effect Transistor, 5A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4 EPC2012C 0 Build or Request
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EPC2016 Efficient Power Conversion
1 Power Field-Effect Transistor, 11A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6 EPC2016 0 Build or Request
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EPC20-1200 Regal Electronics
1 Power Transformer, 24VA EPC20-1200 0 Build or Request
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EPC2046ENGR Efficient Power Conversion
1 Power Field-Effect Transistor EPC2046ENGR 0 Build or Request
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EPC2032 Efficient Power Conversion
1 TRANS GAN 100V 48A BUMPED DIE EPC2032 0 Build or Request
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EPC2034ENGR Efficient Power Conversion
1 Power Field-Effect Transistor, 31A I(D), 200V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 4.60 X 2.60 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-24 EPC2034ENGR 0 Build or Request
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EPC20-220 Regal Electronics
1 Power Transformer, 4.4VA EPC20-220 0 Build or Request
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EPC2010 Efficient Power Conversion
1 Power Field-Effect Transistor, 12A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-7 EPC2010 0 Build or Request
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EPC2020 Efficient Power Conversion
1 Power Field-Effect Transistor, 60A I(D), 60V, 0.0022ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-30 EPC2020 0 Build or Request
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EPC2039 Efficient Power Conversion
1 TRANS GAN 80V BUMPED DIE EPC2039 0 Build or Request
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EPC2027ENGR Efficient Power Conversion
1 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET, DIE-12 EPC2027ENGR 0 Build or Request
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EPC2045ENGRT Efficient Power Conversion
1 Power Field-Effect Transistor EPC2045ENGRT 0 Build or Request
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EPC2014 Efficient Power Conversion
1 Power Field-Effect Transistor, 10A I(D), 40V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-5 EPC2014 0 Build or Request
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EPC2010CENGR Efficient Power Conversion
1 Power Field-Effect Transistor, 22A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 3.60 X 1.60 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-7 EPC2010CENGR 0 Build or Request
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EPC2065 Efficient Power Conversion
1 Power Field-Effect Transistor, 60A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET, DIE-8 EPC2065 0 Build or Request
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EPC2033 Efficient Power Conversion
1 TRANS GAN 150V 7MOHM BUMPED DIE EPC2033 0 Build or Request
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