ES2B Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
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ES2B(SMAG) JCET Group
1 Super Fast Recovery Rectifier Diode ES2A through ES2J with 2A average forward current, 50V to 600V repetitive peak reverse voltage, high surge current capability, and operating junction temperature from -55°C to +150°C. ES2B(SMAG) 0 Build or Request
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ES2BW AK Semiconductor
1 Surface Mount Superfast Recovery Rectifier in SOD-123FL package, 50 to 600V reverse voltage, 2A forward current, 35ns maximum reverse recovery time, 0.95V typical forward voltage at 2A. ES2BW 0 Build or Request
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ES2BBG Shikues Semiconductor
1 Surface Mount, 50-600V, 2A, Low Profile, Glass Passivated, Superfast Recovery, RoHS Compliant. ES2BBG 0 Build or Request
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ES2BF JCET Group
1 Super Fast Recovery Rectifier Diode in SMAF package, 2A average forward current, 50V to 600V repetitive peak reverse voltage, high surge current capability, operating junction temperature from -55C to +150C. ES2BF 0 Build or Request
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ES2BA(ER2B) Shenzhen Heketai Electronics Co Ltd
1 ES2A to ES2M series surface mount superfast recovery rectifier diodes in SMA package, featuring low forward voltage drop, low reverse leakage current, 2 A average forward current, and 50 ns reverse recovery time. ES2BA(ER2B) 0 Build or Request
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ES2BA Jiangsu JieJie Microelectronics Co Ltd
1 Surface mount super fast recovery rectifier with 2.0A average forward current, 50-200V repetitive peak reverse voltage, 35ns reverse recovery time, and glass passivated junction in DO-214AC package.Super fast recovery rectifier in DO-214AC (SMA) surface mount package, with 2.0A average forward current, 50 to 200V repetitive peak reverse voltage, 50A surge current, 0.95V forward voltage, and 35ns reverse recovery time, lead-free and rated for junction temperatures from -55 to +150°C. ES2BA 0 Build or Request
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ES2BF Shandong Jingdao Microelectronics Co Ltd
1 Surface Mount Superfast Recovery Rectifier with 50 to 600 V reverse voltage, 2 A forward current, low profile SMAF package, glass passivated junction, and lead-free design compliant with EU RoHS 2011/65/EU. ES2BF 0 Build or Request
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ES2BF SUNMATE electronic Co., LTD
1 Surface mount super fast rectifier diodes with 2.0 A average rectified current, 50 to 600 V blocking voltage, low forward voltage drop, and reverse recovery time of 35 ns, suited for automatic assembly in SMBF package. ES2BF 0 Build or Request
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ES2BA Galaxy Semi-Conductor Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon ES2BA 0 Build or Request
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ES2B/ES2BB Microdiode Semiconductor (MDD)
1 Surface mount, 50-600V, 2.0A, low leakage, DO-214AC/SMA, 0.055g. ES2B/ES2BB 0 Build or Request
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ES2BA Luguang Electronic Technology Co Ltd
1 Fast Recovery Diode, Case Style : SMA; IAV (A) : 2; VRRM (V) : 100; IFSM (A) : 50; VF (V): 0.95; @IAV (A): 2; IR (µA) TA=25ºC: 5; TRR (nS) : 25 ES2BA 0 Build or Request
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ES2BBF (ER2BBF) Shenzhen Heketai Electronics Co Ltd
1 Surface Mount Superfast Recovery Rectifier with 2 A forward current, 50 to 600 V reverse voltage, glass passivated chip junction, low profile SMBF package, and lead-free finish compliant with EU RoHS 2011/65/EU. ES2BBF (ER2BBF) 0 Build or Request
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ES2BA SUNMATE electronic Co., LTD
1 2.0A surface mount super fast rectifier diodes in SMA (DO-214AC) molded plastic case, with 50 to 600V voltage range, low forward voltage drop, glass passivated die, and operating temperature from -65 to +150°C. ES2BA 0 Build or Request
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ES2BAF Luguang Electronic Technology Co Ltd
1 Fast Recovery Diode, Case Style : SMAF; IAV (A) : 2; VRRM (V) : 100; IFSM (A) : 50; VF (V): 0.95; @IAV (A): 2; IR (µA) TA=25ºC: 5; TRR (nS) : 25 ES2BAF 0 Build or Request
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ES2BF AK Semiconductor
1 Surface Mount Superfast Recovery Rectifier with reverse voltage ratings from 50 to 600V, 2A forward current, low profile SMAF package, glass passivated junction, and lead-free design compliant with EU RoHS directives. ES2BF 0 Build or Request
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ES2BBF AK Semiconductor
1 Surface Mount Superfast Recovery Rectifier in SMBF package, 2A average forward current, 50 to 600V repetitive peak reverse voltage, 35ns maximum reverse recovery time, glass passivated junction, lead-free. ES2BBF 0 Build or Request
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ES2BW Microdiode Semiconductor (MDD)
1 Glass passivated, low reverse leakage, 50-600V, 2.0A, 250°C/10 sec, 0.375” lead, 5 lbs tension, JEDEC 6OD-123FL, 0.007 oz. ES2BW 0 Build or Request
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ES2BAL Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon ES2BAL 0 Build or Request
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ES2B-M3/5BT Vishay Semiconductors
1 DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode ES2B-M3/5BT 0 Build or Request
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ES2BAR3 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC ES2BAR3 0 Build or Request
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ES2B+ SPC Multicomp
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon ES2B+ 0 Build or Request
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ES2BALM3G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon ES2BALM3G 0 Build or Request
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ES2BHM3/52T Vishay Intertechnologies
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA ES2BHM3/52T 0 Build or Request
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ES2BAF3G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC ES2BAF3G 0 Build or Request
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ES2B-L-TP Micro Commercial Components
1 Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC ES2B-L-TP 0 Build or Request
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