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Image Part Number D.S Description Package Category Prices / Stock Model Action
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FES3GTRTS Fagor Electrónica
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB FES3GTRTS 0 Build or Request
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ES3GR6 Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB ES3GR6 0 Build or Request
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ES3G/57T Vishay Semiconductors
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB ES3G/57T 0 Build or Request
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ES3G JCET Group
1 Super Fast Recovery Rectifier Diode ES3A through ES3J in SMBG package, 3 A average forward current, 50 to 600 V repetitive peak reverse voltage, high surge current capability, operating junction temperature up to 150 °C. ES3G 0 Build or Request
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ES3GC SUNMATE electronic Co., LTD
1 Surface mount super fast recovery diode in SMC/DO-214AB package, 50 to 600V repetitive reverse voltage, 3.0A average rectified current, 35ns reverse recovery time, low forward voltage drop, glass passivated junction.Surface mount super fast recovery diodes in SMC/DO-214AB package, rated for 50 to 600V repetitive reverse voltage, 3.0A average rectified current, 100A peak forward surge, with 35ns reverse recovery time and low forward voltage drop. ES3GC 0 Build or Request
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ES3G Luguang Electronic Technology Co Ltd
1 Fast Recovery Diode, Case Style : SMC; IAV (A) : 3; VRRM (V) : 400; IFSM (A) : 100; VF (V): 1.25; @IAV (A): 3; IR (µA) TA=25ºC: 10; TRR (nS) : 35 ES3G 0 Build or Request
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ES3G (ER3G) Shenzhen Heketai Electronics Co Ltd
1 ES3G(ER3G) is a surface mount superfast recovery rectifier diode with 400 V peak reverse voltage, 3 A average forward current, 35 ns reverse recovery time, low forward voltage drop, and glass passivated junction for high reliability. ES3G (ER3G) 0 Build or Request
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ES3G Jinan Jingheng Electronics Co Ltd
1 Rectifier Diode ES3G 0 Build or Request
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ES3GB Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AA ES3GB 0 Build or Request
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ES3G Taitron Components Inc
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB ES3G 0 Build or Request
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AES3G Suzhou Good-Ark Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 700V V(RRM), Silicon, DO-214AB AES3G 0 Build or Request
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ES3GB-AR4G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AA ES3GB-AR4G 0 Build or Request
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ES3G Frontier Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB, SMC, 2 PIN ES3G 0 Build or Request
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ES3GBF1 Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AA ES3GBF1 0 Build or Request
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ES3G Galaxy Microelectronics
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon ES3G 0 Build or Request
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ES3GB Yangzhou Yangjie Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), DO-214AA ES3GB 0 Build or Request
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ES3GB Suzhou Good-Ark Electronics Co Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AA ES3GB 0 Build or Request
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ES3GB-AR5G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AA ES3GB-AR5G 0 Build or Request
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ES3GV-W Rectron Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB ES3GV-W 0 Build or Request
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ES3G Vishay Intertechnologies
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM) ES3G 0 Build or Request
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ES3GHV6G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-214AB ES3GHV6G 0 Build or Request
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ES3GB Lite-On Semiconductor Corporation
1 Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon ES3GB 0 Build or Request
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ES3G SUNMATE electronic Co., LTD
1 Surface mount super fast recovery diodes in SMC/DO-214AB package, rated 50 to 600V, 3.0A average rectified current, 100A peak surge, 35ns reverse recovery time, operating junction temperature -65 to +150°C.Surface mount super fast recovery diodes in SMC/DO-214AB package, rated 50 to 600V, 3.0A average rectified current, 100A non-repetitive surge, 35ns reverse recovery time, operating junction temperature -65 to +150°C.Surface mount super fast recovery diodes in SMC/DO-214AB package, 50 to 600V reverse voltage range, 3.0A average rectified current, 100A peak surge current, 35ns reverse recovery time, low forward voltage drop, glass passivated junction, operating temperature -65 to +150°C. ES3G 0 Build or Request
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ES3GB SLKOR
1 ES3GB 0 Build or Request
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ES3GF Shandong Jingdao Microelectronics Co Ltd
1 Surface mount superfast recovery rectifier with 50 to 600 V reverse voltage, 3 A forward current, low profile SMAF package, glass passivated junction, and lead-free design compliant with EU RoHS directives. ES3GF 0 Build or Request
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