IPB60 Footprint, Symbol and 3D Model search results

Showing 25 of 116 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IPB60R055CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 38A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R055CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R160P6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R160P6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R099C7 Infineon Technologies AG	1	Power Field-Effect Transistor, 22A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R099C7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R385CPXT Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R385CPXT	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB60R280P6 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R280P6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R380C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R380C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R120C7 Infineon Technologies AG	1	Power Field-Effect Transistor, 19A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R120C7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R299CPAATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R299CPAATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R070CFD7 Infineon Technologies AG	1	Power Field-Effect Transistor, 31A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R070CFD7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R600CP Infineon Technologies AG	1	Power Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R600CP	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R199CP Rochester Electronics LLC	1	16A, 600V, 0.199ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN	IPB60R199CP	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R060P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R060P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R280C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R280C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R380C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R380C6	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R280P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R280P7	3D model not available Symbol and footprint not available 0	0 Build or Request

	IPB60R360CFD7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 7A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB	IPB60R360CFD7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R180P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 18A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R180P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R105CFD7ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 21A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB	IPB60R105CFD7ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R190C6XT Infineon Technologies AG	1	Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R190C6XT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R099C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R099C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R160C6ATMA1 Infineon Technologies AG	1	Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R160C6ATMA1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R180C7 Infineon Technologies AG	1	Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R180C7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R125CPXT Infineon Technologies AG	1	Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R125CPXT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R120P7 Infineon Technologies AG	1	Power Field-Effect Transistor, 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R120P7	3D model not available Symbol and footprint not available 0	0 Build or Request
	IPB60R280C6 Infineon Technologies AG	1	Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	IPB60R280C6	3D model not available Symbol and footprint not available 0	0 Build or Request
1 2 3 4 5

Can't find what you're looking for? Request this part

IPB60 Model Download Search Results

Popular Power Field-Effect Transistors