IRF63 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRF632 Micro Electronics Ltd	1	Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IRF632	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF632-003PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF632-003PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF632-003 Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF632-003	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF635 International Rectifier	1	Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF635	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRF630 Comset Semiconductor	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF630	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF635 Infineon Technologies AG	1	Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF635	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF633-013PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF633-013PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF633-005PBF International Rectifier	1	Power Field-Effect Transistor, 7.3A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRF633-005PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF635-011PBF International Rectifier	1	Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRF635-011PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF630SPBF Vishay Intertechnologies	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRF630SPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF630-012 International Rectifier	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF630-012	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF632-011PBF International Rectifier	1	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRF632-011PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF630 Intersil Corporation	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF630	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF631-011PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF631-011PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF633-010 International Rectifier	1	Power Field-Effect Transistor, 7.3A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF633-010	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRF634-009PBF International Rectifier	1	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF634-009PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF634 Vishay Intertechnologies	1	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF634	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF635-013PBF International Rectifier	1	Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRF635-013PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF631-002PBF Infineon Technologies AG	1	Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF631-002PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF630NSTRR New Jersey Semiconductor Products Inc	1	Power Field-Effect Transistor, 9.3A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRF630NSTRR	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF634-031PBF International Rectifier	1	Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF634-031PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF630-017 International Rectifier	1	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF630-017	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF633-004 Infineon Technologies AG	1	Power Field-Effect Transistor, 7.3A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF633-004	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF632 Vishay Siliconix	1	Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	IRF632	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRF632-006PBF International Rectifier	1	Power Field-Effect Transistor, 7.3A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRF632-006PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
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