IRFM2 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IRFM224BS62Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.92A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFM224BS62Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM210ATF Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	IRFM210ATF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM210BD84Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.77A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFM210BD84Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM210A Samsung Semiconductor	1	Power Field-Effect Transistor, 0.77A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN	IRFM210A	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFM250 New Jersey Semiconductor Products Inc	1	Trans MOSFET N-CH 200V 27.4A 3-Pin(3+Tab) TO-254AA	IRFM250	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM240 TT Electronics Resistors	1	Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3	IRFM240	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM240 TT Electronics Power and Hybrid / Semelab Limited	1	18A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3	IRFM240	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM260PBF International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3	IRFM260PBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM250R1 TT Electronics Resistors	1	Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN	IRFM250R1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM260U International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFM260U	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM260UPBF International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFM260UPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM214BD84Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.64A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFM214BD84Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM260D Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	IRFM260D	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM250-JQR-B TT Electronics Resistors	1	Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN	IRFM250-JQR-B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM224A Samsung Semiconductor	1	Power Field-Effect Transistor, 0.92A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN	IRFM224A	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFM260DPBF International Rectifier	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFM260DPBF	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM250 Temic Semiconductors	1	Power Field-Effect Transistor, 28A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3	IRFM250	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM240-QR-BR1 TT Electronics Power and Hybrid / Semelab Limited	1	18A, 200V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3	IRFM240-QR-BR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM260 Infineon Technologies AG	1	Power Field-Effect Transistor, 35A I(D), 200V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3	IRFM260	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM220BL99Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.13A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFM220BL99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM220AD84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 1.13A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	IRFM220AD84Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM254R1 TT Electronics Resistors	1	Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL PACKAGE-3	IRFM254R1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM250DR1 TT Electronics Power and Hybrid / Semelab Limited	1	27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254, HERMETIC SEALED, METAL PACKAGE-3	IRFM250DR1	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM250D International Rectifier	1	Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN	IRFM250D	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFM214A Samsung Semiconductor	1	Power Field-Effect Transistor, 0.64A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN	IRFM214A	3D model not available Symbol and footprint not available 0	0 Build or Request
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